Plasma etching device and plasma etching method

Abstract

The present invention provides a plasma etching device and a plasma etching method, which are techniques capable of obtaining high in-plane uniformity for etching in plasma etching of a substrate. An appropriate temperature of the focus ring (3) that can perform etching with high in-plane uniformity for each film of the multilayer film (7) formed on the wafer (W) is grasped in advance, and is reflected in the set temperature as a set temperature. In the process procedure (64), and for each film being etched continuously, the temperature of the focus ring (3) is controlled in an appropriate temperature range including the set temperature of the focus ring (3) and the heating mechanism and the cooling mechanism are controlled . In addition, as a heating mechanism for the focus ring (3), heat radiation generated by laser light is used. In addition, in the cooling of the focus ring (3), the heat of the focus ring (3) is dissipated to the support table (2) without using a heater as a heat medium, so that the heating mechanism and the cooling mechanism are independent of each other and separate.

Description

technical field [0001] The invention relates to a plasma etching device and a plasma etching method for etching a substrate by using plasma. Background technique [0002] For example, a parallel plate type plasma etching apparatus used in the manufacturing process of a semiconductor device is a mounting table for mounting a substrate such as a semiconductor wafer on which a lower electrode is formed, and an upper electrode formed opposite to the mounting table. A gas showerhead for the electrode and a ring-shaped member called a focus ring (Japanese: フォカスリンゲ) surrounding the substrate on the mounting table are arranged in a vacuum container. Due to the miniaturization of semiconductor device patterns, etc., processing with high uniformity is required between substrates or within the surface of substrates. In response to such requests, processing parameters, device hardware configurations, etc. have been studied and improved. For example, in Patent Document 1, it is describe...

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Problems solved by technology

[0004] Patent Document 2 describes a focus ring that can adjust the temperature by contacting a heat transfer member, and Patent Document 3 describes an apparatus in a semiconductor processing container that has a heater inside a consumable ring that is in contact with the focus ring. , but in order to process higher in-plane uniformity, further research is required

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