Testing method for polycrystalline silicon thin film resistor on polycrystalline silicon array substrate

Abstract

Disclosed is a method for testing the resistance of a polysilicon thin film on a polysilicon array substrate, so as to timely and accurately monitor the resistance of a doped polysilicon thin film, thereby reducing production losses and improving production efficiency. The method comprises: providing a substrate and a monitoring piece; forming a doped polysilicon thin film and a gate insulation layer on the substrate and the monitoring piece synchronously, a patterned polysilicon thin film being formed on the substrate, and a patterned polysilicon thin film or a non-patterned polysilicon thin film is formed on the monitoring piece; performing a resistance test on the polysilicon thin film on the monitoring piece.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for testing polysilicon thin film resistance on a polysilicon array substrate. Background technique [0002] The main feature of a Thin Film Transistor Liquid Crystal Display (TFT-LCD) is that each pixel is equipped with a semiconductor switching device, that is, a Thin Film Transistor (TFT). Therefore, in the TFT-LCD manufacturing process, the most important step is to form a TFT array on a substrate (preparing a polysilicon array substrate). Specifically, a polysilicon film is first formed on the substrate, and then the polysilicon film is doped to form the source and drain of the TFT device, and the resistance and resistance uniformity of the polysilicon film at the source and drain directly affect the electrical performance of the transistor device, and the polysilicon film The electrical conductivity of the polysilicon film is not only related to the dopant dose, but ...

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Problems solved by technology

[0004] Existing measurement methods cannot accurately and non-destructively test the resistance of polysilicon thin films on polysilicon array substrates

In the prior art, the resistance value estimated by the thickness is only a theoretical calculation value, which is usually quite different from the actual value. The resistance value calculated by the I-V curve is the resistance of the source and drain of the device, which is generally the total of multi-layer films including polysilicon films. The resistance of the polysilicon film cannot accurately reflect the quality of the polysilicon film; and other methods of directly measuring the resistance of the polysilicon film, such as the four-probe method, will cause damage to the substrate film (mainly the polysilicon film)

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