Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for splicing maskless digital projection lithography pattern

A maskless, projection light technology, applied in the field of maskless lithography, can solve the problems of line dislocation, wrapping, overlapping, etc., to achieve low cost, improve quality, and solve the effect of distortion

Inactive Publication Date: 2012-10-10
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF5 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the limited single etching area of ​​this lithography technology, and factors such as environmental vibration interference and the displacement accuracy of the workpiece table have a huge impact on the precise position of the field-by-field exposure of the image, resulting in line misalignment, wrapping, Phenomena such as overlapping
In particular, if this technology etches large-area graphics, there are great technical problems in achieving high-precision writing quality.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for splicing maskless digital projection lithography pattern
  • Method for splicing maskless digital projection lithography pattern
  • Method for splicing maskless digital projection lithography pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] Such as figure 1 As shown in , the present invention provides a pattern splicing method suitable for digital micromirror maskless digital lithography. The pattern to be etched is divided, the template design, the sub-pattern is modulated by the corresponding template, and the modulated sub-pattern is exposed frame by frame. Among them, before the actual writing operation, the pattern to be etched is divided into multi-frame sub-patterns with a size of 1024×768 pixels, and then each sub-pattern is multiplied by the designed corresponding template to realize the preprocessing of the sub-patterns. When the digital micromirror is used for maskless digital projection lithography to expose large-area graphics, due to the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for splicing maskless digital projection lithography pattern. The method comprises the steps of S1 segmenting a pattern to be etched to obtain multiple segmented frames of sub-pattern, wherein each frame of sub-pattern is of same size; S2 setting a template size which is the same with the size of each frame of sub-pattern; S3 multiplying each segmented frame of sub-pattern by the template to obtain a boundary splicing region of the sub-pattern, and employing a gray modulation template to modulate the gray value of the boundary splicing region to obtain the modulated sub-pattern; S4 carrying out exposure on the modulated sub-pattern frame-by-frame with digital micromirror display to realize the splicing of the reproduction transfer of the modulated sub-pattern which is displayed by the digital micromirror to a substrate. The method provided by the invention can fairly solve the splicing problem which exists when a pattern with a large area is etched, thus the etching quality of the digital projection lithography pattern is improved.

Description

technical field [0001] The invention belongs to the technical field of maskless lithography, and in particular relates to a pattern splicing method suitable for maskless digital projection lithography. Background technique [0002] With the rapid development of micro-optical, mechanical, electrical and other technologies, micro-fabrication technology has developed rapidly. Micro-optical components are widely used in the fields of communication, military, space technology, super-finishing, biomedicine, and information processing. This has led researchers to conduct extensive research on the design, fabrication and application of micro-optics. Micro-optics has made great progress in design theory and manufacturing methods. In order to further expand the application field of micro-optics components, higher requirements are put forward for its manufacturing methods. Therefore, it is still an extremely important research direction in the field of micro-optics at home and abroad...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20G06T7/00
Inventor 朱江平胡松陈铭勇唐燕何渝
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com