107 results about "Field exposure" patented technology

Methods and devices are provided for support of a body structure. The devices can be adjusted within the body of a patient in a minimally invasive or non-invasive manner such as by applying energy percutaneously or external to the patient's body. The energy may include, for example, acoustic energy, radio frequency energy, light energy and magnetic energy. Thus, as the body structure changes size and/or shape, the size and/or shape of the annuloplasty rings can be adjusted to provide continued reinforcement. In certain embodiments, the devices include a shape memory material that is responsive to changes in temperature and/or exposure to a magnetic field. A material having enhanced absorption characteristics with regard to a desired heating energy may be used in order to facilitate heating and adjustment of the support device.

Disclosed is a resist pattern forming method wherein an exposure mask with a light blocking film having a fine opening not greater than a wavelength of exposure light is placed close to a resist layer provided on a substrate and wherein exposure light is projected to the resist layer through the exposure mask, whereby the resist layer is exposed with near-field light leaking from the fine opening such that a pattern of the exposure mask is transferred to the resist layer. The method includes a resist layer forming step for forming, on the substrate, a negative type resist layer with a thickness not less than a leakage depth of the near-field light, an exposure step for exposing the negative type resist layer with the near-field light, and a development step for developing the exposed negative type resist layer by use of a developing liquid to form a pattern in a region being shallower than the thickness of the negative type resist layer.

A near-field light generating structure for generating near-field light has a pattern of a fine metal structure comprising a light blocking layer or a pattern of a fine opening provided in the light blocking layer. The fine metal structure or the fine opening has a size of not more than a wavelength of incident light. The fine metal structure or the fine opening has a sectional shape, in a plane parallel with the incident light, which is asymmetrical in terms of a member adjacent to the fine metal structure or the fine opening.

Disclosed is a photomask for near-field exposure, that includes a light blocking film having a group of small openings being arrayed and each having an opening width not greater than a wavelength of exposure light, wherein a shape and/or disposition of the small-opening group is set so that near-field light escaping from the small openings in response to projection of exposure light to the small openings has approximately even light intensity distributions.

An x-ray CT system that generates tomographic phase contrast or dark field exposures, has at least one grating interferometer with three grating structures arranged in series in the radiation direction, with a modular design of the second and third grating structures. The distance between the first grating structure of the x-ray source and the second grating structure (fashioned as a phase grating) of the respective grating/detector modules is adapted, depending on the fan angle, corresponding to a period of the grating structure of the x-ray source projected onto the grating detector module at a respective fan angle (φ_i).

A near-field photomask is made up of a light shield film and openings formed in the light shield film, the photomask being used to expose an exposure target with a near-field light generated through the openings. The openings formed in the light shield film comprise two or more parallel rows of first slit openings each having a width smaller than 100 nm, and a second slit opening having a width smaller than 100 nm and extended perpendicularly to the rows of first slit openings while interlinking at least two of the rows of first slit openings.

There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist α (μm⁻¹) for the exposure light is such that 0.5≦α≦7.

A photomask for use in near-field exposure includes a mask support which is transparent to exposure light; a shading film which is formed on one side of the mask support, and has at least one-opening arranged to form a predetermined pattern; and at least one filler which is transparent to the exposure light, and is arranged in the at least one opening with a predetermined height above the level of the boundary between the mask support and the shading film. The difference between the thickness of the shading film and the height of each of the at least one filler does not exceed 50 nanometers.

A system is configured to shield an interior chamber of a structure. The system may include a power source, an outer shield assembly operatively connected to the power source and coupled to an outer wall of the structure, and an inner shield assembly surrounding the internal chamber. The outer shield assembly generates a magnetic field through and around the structure. The inner shield assembly deflects radiation particles away from the interior chamber and re-directs portions of the magnetic field around the interior chamber.

Disclosed is a method of detecting an attraction force between substrates, and a near-field exposure method and apparatus, wherein, in the attraction force detecting method, an elastically deformable first substrate is intimately contacted to a second substrate which is not elastically deformable as compared with the first substrate and, when the first and second substrates so contacted are separated from each other, an attraction force acting between the first and second substrates is detected. Specifically, the includes at least one of (i) a step for detecting an attraction force acting between the first and second substrates on the basis of a difference between (a) a physical quantity necessary for intimately contacting the first substrate to the second substrate and (b) a physical quantity necessary for separating the first substrate from the second substrate, and (ii) a step of detecting an attraction force acting between the first and second substrates on the basis of an amount of deformation of the first substrate relative to the second substrate.

The invention relates to the field of laparoscopic micro-invasive surgery, in particular to a spindly non-pneumoperitoneum device for a single-port laparoscopy. According to the spindly non-pneumoperitoneum device, the defects of small surgery space, poor surgical field exposure and great quantity of abdominal incisions in a traditional non-pneumoperitoneum technology can be overcome. The spindly non-pneumoperitoneum device consists of a fixed frame, a suspension mechanism and a spindle mechanism. Due to the adoption of the technical scheme that a support ring enables spindly spokes to be stretched off and be arrayed in an umbrella shape by upwards lifting a suspender, an anterior abdominal wall is semi-spherically lifted and suspended by the spokes arrayed in an umbrella shape and the phenomenon that the surgery space becomes smaller and narrower due to the fact that abdominal walls on two sides gather towards the middle to extrude intestinal canal to be concentrated to the middle by a suspending pull force of the abdominal walls is avoided; due to adoption of single incision in umbilical region, an illuminating probe, surgical instruments and the like extend into an abdominal cavity for surgery by using a hollow structure of the device; and due to the adoption of a rotational suspension device, the surgical instruments obtain a more favorable operation angle and the problems of small surgery space, insufficient surgical field exposure and great quantity of abdominal incisions in the traditional non-pneumoperitoneum technology are better solved.

A method for measuring the imaging quality of a lithography machine, comprising the following steps: exposing uniformly distributed DFOCAL mark patterns on a mask to a silicon wafer under n defocus amounts of a lithography machine to form n exposure fields; using an alignment system Sampling and measuring n exposure fields at equal intervals to obtain the alignment position of each mark in n/m fields; using the change law between the deviation of the horizontal position of the mark imaging and the defocus of the silicon wafer to calculate each DFOCAL mark point in the exposure field The approximate position of the best focus; measure the alignment position of the corresponding DFOCAL mark in the n/m fields closest to the approximate position of the best focus of each DFOCAL marker in the exposure field; accurately fit the best focus of each DFOCAL marker position; calculate the axial image quality parameter. The method of the invention utilizes the DFOCAL mark to perform high-precision, wide-range, and rapid measurement of the axial image quality parameters used for evaluating the imaging quality of the lithography machine.

The invention relates to the field of peritoneoscope minimally-invasive surgery, in particular to a direct-inserting type peritoneoscope pneumoperitoneum-avoiding device. The shortcomings that an existing pneumoperitoneum-avoiding technology operation is small in space and bad in surgical field exposure can be overcome. The direct-inserting type peritoneoscope pneumoperitoneum-avoiding device comprises a support, a cantilever beam, a hanging umbrella and a sleeve. The technical scheme that an abdominal wall is pulled and lifted through umbrella leaves is used, a front abdominal wall is lifted, pulled and hung through the umbrella leaves, and the problem that the existing pneumoperitoneum-avoiding technology operation is not sufficient in space exposure is well solved.

A near-field exposure mask includes a light blocking film having an opening smaller than a wavelength of exposure light, and a mask base material for holding the light blocking film. The near-field exposure mask is configured and positioned to effect exposure of an object to be exposed to near-field light generated corresponding to the opening during contact thereof with the object to be exposed. The mask base material is transparent to the exposure light and comprises a synthetic resin material having Young's modulus in a range of 1 GPa or more to 10 GPa or less.

An optical imprinting apparatus, and a method for producing a two-dimensional pattern, have line widths less than the wavelength of an exposure light. The evanescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises a container in which light is enclosed, an exposure-mask having a proximity field exposure pattern firmly fixed to a section of the container for exposing the exposure pattern on a photo-sensitive material through an evanescent field by the light enclosed therein; and a light source for supplying the light in the container.

A near-field exposure method includes closely contacting an exposure mask having a light blocking film with small openings of a size not greater than a wavelength of exposure light of an exposure light source, to a photoresist layer formed on a substrate having surface unevenness, and projecting the exposure light of the exposure light source onto the exposure mask so that the photoresist is exposed based on near-field light escaping from the small openings, wherein the near-field exposure is carried out while keeping both a contact region in which the light blocking film and the photoresist layer are in contact with each other and a liquid region in which an interspace between the light blocking film and the photoresist layer is filled with a liquid, coexisting between the light blocking film and the photoresist layer, whereby fluctuation of exposure state of the near-field exposure due to surface unevenness of the substrate is reduced effectively.