Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photo-etching machine imaging quality measuring method

A technology of imaging quality and measurement method, which is applied in the field of measuring the axial image quality parameters of lithography machine by using FOCAL marks with double fine structure, can solve the problem that the measurement range and measurement accuracy cannot be taken into account at the same time, and achieve the reduction of measurement time and high test efficiency. The effect of precision

Active Publication Date: 2008-04-30
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a method for measuring the imaging quality of a lithography machine, which uses a double fine-structured FOCAL mark (DFOCAL mark for short), which can measure the axial image quality of a lithography machine for evaluating the imaging quality of a lithography machine. Parameters can be measured with high precision and fast, which can overcome the shortcomings of the existing technology that the measurement range and measurement accuracy cannot be taken into account at the same time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photo-etching machine imaging quality measuring method
  • Photo-etching machine imaging quality measuring method
  • Photo-etching machine imaging quality measuring method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this embodiment, the DFOCAL mark as shown in Figure 3 is used, the DFOCAL mark includes an outer layer fine structure and an inner layer fine structure; the line width of the outer layer fine structure is 1.5um, and the line width of the inner layer fine structure is 200nm .

[0037] The steps of the method for measuring the imaging quality of the lithography machine of the present invention are as follows:

[0038] Step 1. The deep ultraviolet laser emitted by the light source 101 is irradiated by the illumination system 102 onto the mask R engraved with DFOCAL marks, and 65 DFOCAL marks are evenly distributed on the mask R, and the mask R selectively transmits a part of the light. Part of the light passes through the imaging optical system 103, and the pattern on the mask R is exposed and imaged to different parts of the silicon wafer W under 60 defocuss in the range of 3um. As shown in Figure 4, 12 exposures in this range field, each exposure field is divided int...

Embodiment 2

[0049] In this embodiment, the DFOCAL mark as shown in Figure 8 is adopted, and the DFOCAL mark includes an outer layer fine structure and an inner layer fine structure; the line width of the outer layer fine structure is 1.2um, and the line width of the inner layer fine structure is 150nm .

[0050] The steps of the method for measuring the imaging quality of a lithography machine in the present invention are the same as those in Embodiment 1, the only difference being that in Step 1, in this embodiment, the mask pattern is exposed and imaged on the silicon wafer W at 40 defocuss in the range of 2um. on different parts.

[0051] At the same time, the specific calculation method for the relationship between the DFOCAL marker imaging duty cycle and the defocus amount in this embodiment is: CD / 300nm+CD / 2400nm for 150nm line imaging+1200nm line imaging CD / 2400nm, and the specific calculation results are shown in Figure 9 .

[0052] Based on the above, according to different tes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for measuring the imaging quality of a lithography machine, comprising the following steps: exposing uniformly distributed DFOCAL mark patterns on a mask to a silicon wafer under n defocus amounts of a lithography machine to form n exposure fields; using an alignment system Sampling and measuring n exposure fields at equal intervals to obtain the alignment position of each mark in n / m fields; using the change law between the deviation of the horizontal position of the mark imaging and the defocus of the silicon wafer to calculate each DFOCAL mark point in the exposure field The approximate position of the best focus; measure the alignment position of the corresponding DFOCAL mark in the n / m fields closest to the approximate position of the best focus of each DFOCAL marker in the exposure field; accurately fit the best focus of each DFOCAL marker position; calculate the axial image quality parameter. The method of the invention utilizes the DFOCAL mark to perform high-precision, wide-range, and rapid measurement of the axial image quality parameters used for evaluating the imaging quality of the lithography machine.

Description

technical field [0001] The invention relates to a method for measuring the imaging quality of a lithography machine, in particular to a method for measuring the axial image quality parameters of a lithography machine by using double fine-structured FOCAL (mirror focal plane detection alignment mark) marks. Background technique [0002] Lithography machine is one of the key equipment in the production and manufacturing process of integrated circuits. The imaging quality is an important factor affecting the lithography resolution and overlay accuracy of the lithography machine. Parameters such as optimal focal plane offset, image plane tilt, and field curvature and astigmatism of the projection objective lens are the main factors affecting the imaging quality of the lithography machine along the optical axis, so they are called the axial image quality parameters of the lithography machine. They mainly affect lithography performance indicators such as lithography feature size,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 李术新王帆
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com