Self-detection mending method for built-in self-test system

Abstract

The invention provides a self-detection mending method for a built-in self-test system. The self-detection mending method comprises the following steps: inputting expected data into a memory storage array according to a gradually increased sequence of addresses; optimizing the built-in self-test system, wherein the built-in self-test system records a start address of the memory storage array and reads the data stored in the memory storage array according to an input mode; sequentially comparing each bit data of the stored data which is read according to the address with each bit data of the expected data in the built-in self-test system, which is pre-stored by taking the number of bytes corresponding to the addresses as a unit according to the input mode, and sequentially outputting a comparison result of each address; and when the comparison results indicate that the contents are inconsistent, determining that the stored data of the storage array, which corresponds to the comparison results, is an ineffective address, and mending the stored data of the ineffective address by a redundant array. According to the self-detection mending method, the ineffective address of a memory can be quickly judged, and the current ineffective address of the memory can be mended by the redundant array, so that the test time is shortened.

Description

technical field [0001] The invention belongs to the field of memory manufacturing, in particular to a self-checking and repairing method of a built-in self-testing system (BIST). Background technique [0002] At present, most of the embedded memory tests of System on Chip (SoC) adopt the built-in self-test method, that is, to generate test vectors, memory control signals and address signals by themselves, and to compare the corresponding data of the memory with the ideal simulation data. Compare to determine whether there is a fault in the memory. According to this architectural concept, the semiconductor chip has a memory 304 and a standard memory built-in self-test (Memory Build-Inself-Test-Circuit, MBIST) system 300. figure 1 As shown, each memory 304 must be provided with one MBIST system 300, the standard MBIST system 300 being formed on a semiconductor chip 302 having the memory 304 formed thereon. The semiconductor chip 302 also has conductive pads 306 formed thereo...

AI Technical Summary

Problems solved by technology

It can be seen that the existing built-in self-test method established with the memory takes too long to judge the failure point of the memory.

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