Novel fractal PGS (Program Generation System) structure

Abstract

The invention relates to a novel fractal PGS (Program Generation System) structure. As the existing the on-chip spiral inductor and transformer generate an alternating electromagnetic field, induced current is caused on a substrate to generate energy consumption and reduce the inductance and the Q value. The PGS is located in the central part of a coil-wound inductor / transformer, a first-order, second-order, third-order, or even higher order pattern grounded shield layer is constructed by a metal layer with a thin bottom on the basis of an H-shaped basic unit and a cross-shaped basic unit through the self-similarity of fractal theory and the iterative theory. The novel fractal PGS structure screens out the electromagnetic field which permeates the substrate effectively, reduces the induced current which is capable of generating on the substrate and the substrate surface area, achieves the substrate energy consumption and improves the function of inductance and quality factor.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and specifically relates to a novel PGS (Patterned Ground Shield) structure applying fractal theory, and the fractal PGS structure is mainly used in passive device inductors / transformers and the like. Background technique [0002] With the rapid development of CMOS radio frequency integrated circuits, the requirements for high performance / low power consumption / integration are getting higher and higher. Unit circuits such as low noise amplifiers, voltage controlled oscillators, mixers, intermediate frequency filters, power amplifiers, etc. are the basis for the success of the entire circuit, and the on-chip inductor / transformer is an essential component. Therefore, its design And optimization has become one of the keys to the successful design of the whole circuit. [0003] An important index to evaluate the performance of inductors / transformers is the quality factor Q, which is defin...

AI Technical Summary

Problems solved by technology

[0004] On-chip inductors / transformers are generally wound on a silicon substrate through a metal film, so they are a relatively open structure, and the electric and magnetic fields will permeate into the entire substrate during operation, so that in the substrate And the area on the surface of the substrate generates an induced current in the opposite direction, which will react on the metal coil, which will relatively reduce the L value of the inductor coil, and will also cause additional substrate energy loss, reducing the inductor / transformer Q value

If the electromagnetic field penetrating into the substrate can be effectively reduced, it will have a great impact on reducing loss, increasing the L value and Q value of the inductor / transformer coil and reducing the insertion loss IL of the transformer.

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