Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer

A semiconductor and deposition layer technology, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, coatings, etc., to achieve the effect of small radial size

Inactive Publication Date: 2012-10-24
SILTRONIC AG
View PDF8 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the proposed solution is that, due to the uncontrolled deposition of material on the back side of the semiconductor wafer, the layers deposited on the front side up to the edge of the semiconductor wafer can therefore only be used to a limited extent.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer
  • Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer
  • Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] according to figure 1 The reactor comprises a chamber with an upper dome 1 , a lower dome 2 and side walls 3 . The upper dome 1 and the lower dome 2 are transparent to the thermal radiation emitted by the radiant heating system arranged above and below the chamber. The layer is deposited from the gas phase on the front side of the semiconductor wafer 4 by directing a process gas over the heated semiconductor wafer's front side and in the process reacting with the exposed front side surface to form the layer. Front side refers to the side of the semiconductor wafer on which the layers are deposited. Typically the polished side of a semiconductor wafer. The process gas is fed in through the gas inlet in the side wall of the chamber, and the waste gas remaining after the reaction is discharged through the gas outlet in the side wall of the chamber. Embodiments of chambers with one further gas inlet and one further gas outlet are known. These embodiments are employed, f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A susceptor for supporting a semiconductor wafer during deposition of a layer on a front side of the semiconductor wafer, the semiconductor wafer having a diameter D and, at its edge, a notch having a depth T, comprising: a ring-shaped placement area having an internal diameter d for the placement of the semiconductor wafer in the edge region of a rear side of the semiconductor wafer, wherein, with the semiconductor wafer having been placed, the relationship (D-d) / 2<T is satisfied,and a protrusion of the area for the placement of semiconductor wafer in the region of the notch of the semiconductor wafer extending the placement area inward, and which completely underlays the notch of the semiconductor wafer.

Description

technical field [0001] The invention relates to a susceptor for supporting a semiconductor wafer during deposition of a layer on the front side of the semiconductor wafer, wherein the susceptor has a placement area for placing the semiconductor wafer in the edge region of the back side of the semiconductor wafer. The invention also relates to a method for depositing a layer on the front side of a semiconductor wafer, wherein said susceptor is used. Background technique [0002] Various embodiments of such bases are known. DE 198 47 101 C1 describes an embodiment in which the placement area is part of a ring forming the base. In an embodiment according to EP 1 460 679 A1, the base additionally has a bottom and is thus disc-shaped. The placement area is constituted by a raised portion at the edge of the disc. DE 10 2006 055 038 A1 discloses an embodiment in which a semiconductor wafer is located in a recessed portion of a ring and the ring is located on a base plate. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/673H01L21/02
CPCH01L21/68735C30B25/12C23C16/4585
Inventor N·维尔纳C·哈格尔R·绍尔
Owner SILTRONIC AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com