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Plasma etching processing tool and methods

A technology of plasma and etching treatment, applied in the field of plasma treatment, which can solve the problems of reduced processing capacity and increased energy demand

Active Publication Date: 2015-04-29
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Consequently, the energy requirements of larger substrates 102 increase and the processing capacity decreases

Method used

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  • Plasma etching processing tool and methods
  • Plasma etching processing tool and methods
  • Plasma etching processing tool and methods

Examples

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Embodiment Construction

[0060] Several exemplary embodiments of improved plasma processing systems and methods suitable for larger substrates without sacrificial processing will now be described. It will be apparent to one skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein.

[0061] Ⅰ. Incomplete surface etching treatment

[0062] Current semiconductor processing is mainly aimed at 200mm and 300mm semiconductor wafers and flat substrates of different shapes and sizes. As the demand for processing power increases, future semiconductor wafers and substrates will become larger, for example, 450mm and larger next-generation semiconductor wafers. In typical plasma processing, the volume of the plasma chamber grows much faster than the diameter of the wafer to be processed within the plasma chamber. As the volume of the plasma chamber increases, the cost of materials for constructing the plasma chamber also increases. Also, as th...

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Abstract

A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.

Description

technical field [0001] The present invention relates generally to plasma processing of substrates, and more particularly to methods and systems for plasma processing a portion of a substrate surface using a compact plasma processing chamber. Background technique [0002] FIG. 1 is a typical plasma processing chamber 100 . The exemplary plasma processing chamber 100 encloses an entire substrate 102 to be processed. A substrate 102 is loaded into the processing chamber 100 . The process chamber 100 is then sealed and purged to expel unwanted gases through the outlet 112 . A pump 114 can help expel unwanted gases. A purge or process gas may be pumped into the process chamber 100 from a process and / or purge gas source 120 coupled to an input port 122 . A purge or process gas may be pumped out of the process chamber 100 to dilute or otherwise remove undesired gases. [0003] Electrical connections to the substrate 102 are typically made through an electrostatic chuck 104 . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/00
CPCH01J37/32366C23C16/50C23C16/503C23C16/505C23C16/513H01J37/32082H01J37/32137H01J37/32376H01L21/6719H01L21/68764H01L21/68771H01L21/68785
Inventor 理查德·戈特朔拉金德尔·德辛德萨穆昆德·斯里尼瓦桑
Owner LAM RES CORP