plasma processing system
A technology for processing systems and plasmas, applied in plasmas, coatings, gaseous chemical plating, etc., can solve problems such as insufficient uniformity, waste of RF power, and high standing wave ratio
Inactive Publication Date: 2016-04-13
NORDSON CORP
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Conventional RF bus systems achieving sufficient field uniformity at 40 kHz provide insufficient uniformity in multiple electrode plasma systems operating at higher plasma excitation frequencies such as 13.56 MHz
Additionally, the input impedance of conventional RF bus systems is difficult to match at these higher frequencies, resulting in high VSWR and wasted RF power
Method used
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Embodiment Construction
[0022] Embodiments of the present invention relate to a radio frequency (RF) bus system for a multi-electrode plasma processing system. An RF bus system couples RF power to multiple electrodes through a series of bus bars, transformers, and impedance matching elements. The RF power bus and ground bus are electrically coupled to the RF power supply to provide a single feed point for the bus system. The power and ground bus bars are in turn electrically coupled to the two secondary electrode bus bars by a plurality of isolation transformers that distribute RF signals 180 degrees out of phase to the positive and negative phase secondary electrode bus bars. The isolation transformers are spatially distributed so that each secondary electrode bus bar is coupled in multiple locations along its length. Each secondary electrode bus bar is coupled to an associated primary electrode bus bar by a plurality of capacitors with connection points spaced along the primary and secondary elect...
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Abstract
The present invention relates to plasma processing systems and methods for distributing RF energy to electrodes in a plasma processing system. The plasma processing system includes power and ground bus bars, positive and negative phase primary electrode bus bars, and positive and negative phase secondary electrode bus bars. The power and ground busses are coupled to the secondary electrode busses by isolation transformers such that the negative phase secondary electrode busses are provided with RF signals 180 degrees out of phase with the RF signals supplied to the positive phase secondary electrode busses. The secondary electrode busses are capacitor-coupled to respective positive-phase and negative-phase primary electrode busses. The primary electrode bus bars are each coupled to electrodes in the vacuum chamber. A load coil coupling the primary electrode bus to RF ground can cooperate with a capacitor to adjust the input impedance at the power bus.
Description
technical field [0001] The present invention relates generally to plasma processing, and more particularly to plasma processing systems configured to distribute radio frequency (RF) power to a plurality of electrodes and methods for providing RF power to a plurality of electrodes in a plasma processing system. Background technique [0002] Plasma processing is often used to deposit thin films and modify the surface properties of substrates on substrates used in a variety of applications including, but not limited to, integrated circuits, electronic packaging, printed circuit boards, and medical devices. In particular, plasma processing systems can be used to deposit various types of thin film materials on substrates, such as optical and biomedical coatings, insulating layers, polymers, and the like. Plasma treatment is also used to prepare semiconductor and printed circuit board surfaces for electronic device packaging. For example, plasma treatment can be used to etch resi...
Claims
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IPC IPC(8): C23C16/505
CPCH01J37/32082H01J37/32174H01J37/32532H01J37/32568H01J37/32577H01J37/32009H01J37/321H05H1/46H05H1/4652
Inventor 托马斯·V·博尔登艾尔玛·M·卡利卡罗伯特·S·康德拉少弗路易斯·费耶罗詹姆士·D·格蒂
Owner NORDSON CORP