Exposure frame data generation method used for dot-matrix maskless photoetching

A technology of maskless lithography and generation method, applied in the field of lithography, can solve the problems of increasing complexity, large calculation amount of exposure frame data, increasing time delay processing, etc.

Active Publication Date: 2012-11-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

This method reduces the area of ​​each step size judgment, but increases the time delay processing for almost all focus points (except the refere

Method used

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  • Exposure frame data generation method used for dot-matrix maskless photoetching
  • Exposure frame data generation method used for dot-matrix maskless photoetching
  • Exposure frame data generation method used for dot-matrix maskless photoetching

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Embodiment Construction

[0032] The present invention is implemented under the control of the program flow that generates the entire exposure frame data according to the three steps specified in the technical solution to solve the technical problem, and each step is equipped with a drawing mark:

[0033] The first step: graphics processing, data storage 1;

[0034] a) Rasterize the virtual area to be exposed that is consistent with the lateral size of the focal point of the digital micromirror device (DMD), such as figure 2 As shown, the area to be exposed corresponding to the DMD focus lattice 100 and its lateral size is scaled proportionally with a computer, and then the area to be exposed is gridded to 200, and each column 201, 202, 203, 204, 205 and so on correspond to the areas through which the focus points 111, 121, 131, 141, 151 etc. are scanned. The length of each column is determined by the exposure pattern, and the number of columns is equal to the number of DMD focus points. The distance...

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Abstract

The invention provides an exposure frame data generation method used for dot-matrix maskless photoetching, belongs to the technical field of photoetching and aims at providing an exposure frame data generation method used for dot-matrix maskless photoetching. According to the technical scheme adopted by the invention, the method comprises the following steps: performing graphic processing and data storage; performing time value setting and row vector extraction; performing row vector processing so as to obtain the exposure frame data, wherein the three steps are carried out under the control of the whole exposure frame data generation program flow. According to the method, by virtue of reasonably dividing exposure positions and unifying the exposure positions with exposure time, primary graphs and the divided exposure position are compared, all the exposure positions are assigned as '0' or '1', two-page three-dimensional array storage time value and comparison assigned values are used for extracting the comparison assigned values of all focus points on the exposure positions at the same time so as to constitute one frame, along with the increase of the extraction time value, the exposure position of which the front section is subjected to time value extraction is removed, and the frame data generation velocity is effectively improved.

Description

technical field [0001] The invention belongs to a method for generating maskless exposure frame data and relates to the technical field of photolithography. Background technique [0002] In the semiconductor industry, lithography equipment has become the main equipment in the manufacturing process of large-scale integrated circuits, printed circuit boards, flat panel displays and other equipment. In the traditional projection lithography technology, the required pattern is first described on the mask, and then the pattern on the mask is projected onto the substrate coated with photoresist using a high-precision miniature projection lens. One of the masks corresponds to one image to be projected. graphics. [0003] With the continuous reduction of the feature size of large-scale integrated circuits, the cost of mask plates is getting higher and higher, and multiple mask plates need to be used in the manufacture of large-scale integrated circuits. At the same time, for the m...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 刘伟奇孟祥翔郭珍珍柳华康玉思魏忠伦冯睿
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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