Modeling method of SOI (Silicon On Insulator) MOS (Metal Oxide Semiconductor) device

Abstract

The invention provides a modeling method of an SOI (Silicon On Insulator) MOS (Metal Oxide Semiconductor) device, wherein the SOI MOS device is provided with a source and a drain both of which can not be injected into the bottom. The method comprises the following steps of: a, establishing a total model comprising a primary MOS device model of an SOI MOS device with simulated source and drain injected into the bottom, a source body PN junction bottom capacitor model which simulates a source body PN junction bottom capacitor and a drain body PN junction bottom capacitor model which simulates a drain body PN junction bottom capacitor; and b, respectively performing parameter extraction on the primary MOS device model, the source body PN junction bottom capacitor model and the drain body PN junction bottom capacitor model in the total model. According to the modeling method provided by the invention, the influence of the source body PN junction bottom capacitor and the drain body PN junction bottom capacitor in the SOI MOS device with the source and the drain both of which can not be injected into the bottom on the performance of the device is taken into consideration, so that the model precision is improved, and the method can be effectively applied to the simulated design of the device.

Description

technical field [0001] The invention relates to the field of device reference modeling, in particular to a method for modeling SOIMOS devices whose source and drain cannot be injected to the bottom. Background technique [0002] With the development of integrated circuit technology and its more and more widely used, the requirements of high reliability, high performance and low cost must be considered in the design of integrated circuits. The function and accuracy requirements of cost analysis and reliability prediction are also getting higher and higher. In IC CAD software, the MOSFET device model is the key link between IC design and IC product function and performance. With the size of integrated devices getting smaller and smaller, the scale of integration is getting bigger and bigger, and the process of integrated circuits is getting more and more complex, and the requirements for the accuracy of device models are getting higher and higher. Today, an accurate MOSFET m...

AI Technical Summary

Problems solved by technology

[0003] The device targeted by BSIMSOI is a device with source-drain injection to the bottom. In actual circuit design, in order to facilitate the body extraction from the channel length direction, the MOSFET will adopt a device structure with source-drain injection that cannot be injected to the bottom. In this case, it will increase Source-body junction bottom surface capacitance and drain-body junction bottom surface capacitance, the original BSIMSOI model cannot consider the influence of this factor

Images