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Method of manufacture procedures for manufacturing metal protrusion and fusion welded metal

A technology of metal bumps and welding metals, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of reducing packaging volume rate and difficulty in welding process of circuit boards, so as to reduce height unevenness and improve effect of difficulty

Inactive Publication Date: 2012-11-21
WIN SEMICON
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Problems solved by technology

However, if Figure 2A to Figure 2C As shown, when the size of the copper bump is different, after high temperature treatment, the welded metal on the surface of the bump will form islands of different heights due to surface tension, which will cause difficulties in the subsequent welding process with the circuit board, thus reducing the packaging yield.

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  • Method of manufacture procedures for manufacturing metal protrusion and fusion welded metal
  • Method of manufacture procedures for manufacturing metal protrusion and fusion welded metal
  • Method of manufacture procedures for manufacturing metal protrusion and fusion welded metal

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Embodiment Construction

[0014] The difference in the height of the welded metal on the surface is caused by the difference in the area of ​​the metal bump and the surface tension of the welded metal; therefore, controlling the area of ​​the welded metal plated by the process steps will improve the coplanarity problem. Figure 3A to Figure 3F It is a schematic flow chart showing the process method of the present invention for improving the coplanarity of metal welded on the surface of the metal bump. The present invention proposes to use two exposure and development processes to separately control the area of ​​the metal bump and the area of ​​the welded metal to improve the coplanarity of the welded metal. The purpose of the first process of the present invention is to manufacture metal bump structures with different areas on the surface of the semiconductor element. In the first process, a first photoresist layer 30 is coated or bonded on the surface 1 of the semiconductor element; then the position...

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Abstract

A method of manufacture procedures for improving coplanarity of fusion welded metal on the surface of a metal protrusion structure is applicable to flip chip protrusion fusion welded technology of a semi-conductor chip. When metal protrusions with different sizes are arranged on the surface of a component, height unevenness after high-temperature processing of the fusion welded metal due to different sizes of the protrusions can be eliminated or reduced, and therefore difficulty of downstream testing and packaging is reduced. In order to achieve the purposes, the invention provides a method using two manufacture procedures. Metal protrusion area and fusion welded metal area are controlled respectively, and the coplanarity of the fusion welded metal is improved. The steps include: a first manufacture procedure and a second manufacture procedure. The first manufacture procedure is used for manufacturing the metal protrusion structure on the surface of a semi-conductor component, and the second manufacture procedure is used for manufacturing a fusion welded metal structure with different area on the surface of the metal protrusion.

Description

technical field [0001] The invention relates to a process method for improving the metal coplanarity of metal bump surface welding, especially a process method suitable for the flip-chip bump welding technology of semiconductor wafers, and when the surface of the element has metal bumps of different sizes , can eliminate or reduce the problem of non-uniform height of welded metal after high-temperature treatment caused by different bump sizes, thereby improving the difficulty of downstream testing and packaging. Background technique [0002] In recent years, with the rapid development of semiconductor technology, the packaging technology of semiconductor wafers is also increasingly advanced. In terms of gallium arsenide chip packaging, such as power amplifier modules or radio frequency components, wire bond packaging technology is traditionally the main technology, that is, gold wires are used to interactively connect the metal contacts of each component in the chip by spot ...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L23/00
CPCH01L2224/1403H01L24/14H01L2224/14H01L2924/00012
Inventor 萧献赋
Owner WIN SEMICON
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