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Sputtering target

A sputtering target and sputtering surface technology, applied in the field of sputtering targets, can solve the problems of non-uniformity of display characteristics, unsuitable for large-scale display devices, etc., and achieve the effects of high use efficiency and good film uniformity

Active Publication Date: 2015-06-17
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] As a result, as the film thickness distribution deteriorates, the surface resistivity (sheet resistivity) and transmittance of the film also deteriorate in distribution, and the target material is ITO (Indium Tin Oxide) ) When forming a transparent conductive film to manufacture a display device such as LCD or PDP, etc., non-uniformity occurs in display characteristics, and it is not suitable for large-scale display devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0061] Hereinafter, the characteristics of the present invention will be described using examples and comparative examples of the present invention. It should be noted that the following examples are listed for easy understanding of the invention, and the present invention is not limited by these examples. That is, other examples or modifications based on the technical idea of ​​the present invention should be included in the present invention.

[0062] exist figure 1 The target is set on the backing plate shown. In this case, as the backing board, a copper backing board is used, but it may be made of other materials.

[0063] For the target, ITO (Indium Tin Oxide) was used. figure 1 A plan view (part), C-C sectional view, A-A sectional view, and B-B sectional view of the target backing plate assembly are shown in . as it should figure 1 As shown, the backing plate of the target backing plate assembly of Example 1 is rectangular (rectangular) in plan view.

[0064] In th...

Embodiment 1

[0084] In Example 1, the angle α of the inclined surface 4 is 0.76° and the angle β thereof is 0.29° (0.38α). The ratio of the angle β to the angle α is within the range of the preferred conditions of the invention of the present application. As a result, the film thickness uniformity over the entire substrate surface was ±6%, which was a good result.

Embodiment 2

[0086] In Example 2, the angle α of the inclined surface 4 is 0.76°, and the inclined surface 5 has an angle β of 0.57° (0.75α). The ratio of the angle β to the angle α is within the range of the preferred conditions of the invention of the present application. As a result, the film thickness uniformity over the entire substrate surface was ±4%, which was a good result.

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PUM

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Abstract

In this sputtering target, which is rectangular as a whole, a target portion at the center is provided with a flat sputter surface, and target portions at both the ends are provided with tilted sputter surfaces, respectively. The sputtering target is characterized in that the maximum thickness of the target portions at both the ends is more than the thickness of the target portion at the center, and that the sputter surfaces of the target portions at both the ends are respectively provided with the tilted surface tilted at an angle (a) in the downward direction from the portion having the maximum thickness toward the target center, and the tilted surface tilted at an angle (ß), said surface facing the tilted surface at the angle (a). The target having a high use efficiency and excellent film uniformity (film thickness uniformity) in the whole sputter life is provided.

Description

technical field [0001] The present invention provides a sputtering target used when forming a thin film by a sputtering method, which has high target usage efficiency and excellent film uniformity (uniformity of film thickness) throughout the sputtering life. Background technique [0002] The method of forming a thin film by sputtering is widely used in the manufacture of various electrical and electronic components. The sputtering method utilizes the principle that a substrate as an anode is opposed to a target as a cathode, and a high voltage is applied between these substrates and the target in an inert atmosphere to generate an electric field, and the ionized electrons collide with the inert gas Then, plasma is formed, and positive ions in the plasma bombard the surface of the target, thereby bombarding out constituent atoms of the target, and the ejected atoms adhere to the surface of the opposing substrate, thereby forming a film. [0003] Currently, sputtering mostly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/3407C23C14/3464C23C14/34
Inventor 熊原吉一
Owner JX NIPPON MINING & METALS CORP
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