Unlock instant, AI-driven research and patent intelligence for your innovation.

Switchable neutral beam source

A neutral beam and power supply technology, applied in the direction of instruments, electrical components, plasma, etc., can solve problems such as depletion, achieve accurate control, and eliminate the effect of line edge roughness

Inactive Publication Date: 2012-11-28
TOKYO ELECTRON LTD
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even then, trajectories can be altered and the flow of the neutral beam can be severely depleted due to collisions with other particles that may or may not be neutralized and may have trajectories that are not exactly parallel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Switchable neutral beam source
  • Switchable neutral beam source
  • Switchable neutral beam source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention provides apparatus and methods for real-time processing of substrates utilizing a switchable quasi-neutral beam (SQNB) subsystem and SQNB processing sequences created to modify radiation-sensitive materials. In addition, the modified radiation sensitive layer can be used to more accurately control gate and / or spacer critical dimension (CD), control gate and / or spacer CD uniformity and eliminate line edge roughness (LER) and line width roughness (LWR). For example, the SQNB subsystem and SQNB processing sequence can be used to change the mechanical properties of the masking layer material, can be used to modify the chemical and / or mechanical properties of the masking layer material, and can be used to change the etch resistance of the masking layer material.

[0024] In some embodiments, apparatus and methods are provided for creating and / or using a metrology library including profile data for modified photoresist features and periodic structures cr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention can provide apparatus and methods of processing a substrate in real-time using a switchable quasi-neutral beam system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used in an etch procedure to more accurately control gate and / or spacer critical dimensions (CDs), to control gate and / or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Description

technical field [0001] The present invention relates to substrate processing, and more particularly to improved substrate processing using a switchable neutral beam source. Background technique [0002] During semiconductor processing, plasmas are often exploited to remove material by facilitating the anisotropic removal of material along fine lines or within vias (or contacts) patterned on a semiconductor substrate. Aids in the etching process. In addition, plasmas are utilized to enhance the deposition of thin films by providing improved mobility of adatoms on semiconductor substrates. [0003] Once the plasma is formed, selected surfaces of the substrate are etched by the plasma. The process is tuned to achieve the proper conditions, including the proper concentrations of reactants and ion populations desired to etch various features (eg, trenches, vias, contacts, etc.) in selected regions of the substrate. Such substrate materials that need to be etched include silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H3/00
CPCH01L21/28123H01L21/32139H01J37/32422H01L21/0273H01L21/0337H01J37/32357G03F7/2065H01J37/321H05H1/46
Inventor 陈立麦里特·法克
Owner TOKYO ELECTRON LTD