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Method for manufacturing silicon nano structure

A silicon nano and silicon dioxide technology, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of weakening the etching resistance of PMMA, unable to mask, poor etching resistance, etc. Enhanced etching performance and tight arrangement

Inactive Publication Date: 2013-03-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, PMMA has a big defect that its anti-etching performance is poor. When making nanostructures with a size below 100nm, it is necessary to evenly coat a thinner PMMA glue due to the fine pattern, which weakens the anti-etching performance of PMMA even more. Etching performance, the effect of masking cannot be completed in dry etching

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  • Method for manufacturing silicon nano structure
  • Method for manufacturing silicon nano structure
  • Method for manufacturing silicon nano structure

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Embodiment Construction

[0037] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0038] The invention utilizes the characteristics of PMMA positive electron beam glue that becomes negative electron beam glue when the incident electron beam dose is high enough and secondary electron beam irradiation to enhance the etching resistance of PMMA, so that the PMMA glue that plays a masking role on the pattern is resistant to etching. The etching performance is greatly enhanced, and the preparation of silicon nanostructures is completed after dry etching.

[0039] like figure 1 shown, figure 1 It is a flow chart of the method for preparing silicon nanostructures provided by the present invention, and the method includes:

[0040] Step 1: Make the layout required for electron beam exposure;

[0041] Step 2: cleaning and dryin...

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Abstract

The invention discloses a method for manufacturing silicon nano structure, which relates to the technical field of semiconductor micro-nano processing in nano electron technology. The method comprises the following steps of: manufacturing a board pattern required by electron beam exposure; cleaning and drying a substrate which needs manufacturing the silicone nano structure; thermally oxidizing the substrate to produce a silicon dioxide masking layer; evenly coating the substrate with an electron beam exposure adhesive; exposing the pattern using electron beams as required dosage; developing and fixing; using electro beams for secondary exposure; carrying out dry etching on silicon dioxide; and carrying out dry etching on silicone to form the silicone nano structure. The method can manufacture the silicone nano structure smaller than 100 nm by using electron beam exposure and the dry etching technology; moreover, the silicone nano structure has regular shape, smooth edges and compact arrangement, and the finest part of the silicone nano structure can reach 30 nm.

Description

technical field [0001] The invention relates to the technical field of semiconductor micro-nano processing in nano-electronics technology, in particular to a manufacturing process using a combination of electron beam exposure and dry etching. A method for silicon nanostructures up to 30 nm. Background technique [0002] Nanofabrication technology is the most important basic technology in nanotechnology. The main research content of nanofabrication technology is to prepare nanostructures with a characteristic size ranging from 0.1 to 100 nm, in order to obtain a certain nanometer effect. Since it is difficult for traditional processing methods to meet the processing requirements of feature sizes ranging from 0.1 to 100 nm, it is necessary to use equipment methods that meet the new requirements to process nanostructures. [0003] Among them, electron beam exposure technology is a high-resolution lithography technology developed on the basis of scanning electron microscope te...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 张仁平张杨杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI