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Electronic emission photoetching device using selective-grow carbon nanometer tube and method thereof

A technology of carbon nanotubes and electron emission, applied in the direction of carbon nanotubes, nanotechnology for materials and surface science, discharge tube electron guns, etc., can solve the problem of reduced output of lithography devices

Inactive Publication Date: 2003-04-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the throughput of the lithography apparatus is significantly reduced

Method used

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  • Electronic emission photoetching device using selective-grow carbon nanometer tube and method thereof
  • Electronic emission photoetching device using selective-grow carbon nanometer tube and method thereof
  • Electronic emission photoetching device using selective-grow carbon nanometer tube and method thereof

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Embodiment Construction

[0019] figure 1 is a cross-sectional view of an electron emission lithography apparatus using carbon nanotubes as an electron emission source according to an embodiment of the present invention. The electron emission lithography apparatus using selectively grown carbon nanotubes as an electron emission source according to an embodiment of the present invention has the following structure.

[0020] A sample 14 is provided on the substrate 12 and spaced apart from the substrate 12 by a predetermined distance, and an electron beam resist 15 to be patterned is formed on the sample 14, and an electron beam resist 15 to be patterned is formed on the substrate 12, and is located in the chamber. Carbon nanotubes 11 as electron emission sources. The substrate 12 and the sample 14 are disposed between magnetic field generators 13 and 13' for controlling the paths of electrons emitted from the carbon nanotubes 11. Here, a voltage supply unit 16 for applying a voltage to eject electrons...

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Abstract

An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.

Description

technical field [0001] The present invention relates to an electron emission lithography apparatus and method using selectively grown carbon nanotubes, and more particularly, to a method of using selectively grown carbon nanotubes as an electron emission source for nanopatterning, and using a magnetic field to precisely Electron emission lithography apparatus and method for controlling electron trajectories. Background technique [0002] Photolithography means a technique of transferring the pattern of a mask as it is onto a thin resist formed on the surface of a substrate such as a semiconductor wafer. In general, photolithography can be divided into optical photolithography and radiation photolithography. Optical lithography refers to ultraviolet (UV) lithography, while radiation lithography refers to photolithography using X-rays, electron beams (e-beams), or ion beams. [0003] It is difficult to obtain accurate critical dimensions of 70nm or less by conventional optic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02G03F7/20H01J3/02H01J9/02H01J37/305H01L21/027
CPCC01B31/0226H01J2237/3175Y10S977/901G03F7/2059B82Y30/00B82Y40/00H01J3/022H01J2237/06341C01B32/16H01L21/027
Inventor 崔原凤柳寅儆
Owner SAMSUNG ELECTRONICS CO LTD