Semiconductor structure and method for manufacturing same

Abstract

The invention provides a semiconductor structure and a method for manufacturing the same. The method includes steps of providing a substrate and sequentially forming a first high-k dielectric layer, an adjusting layer, a second high-k dielectric layer and a metal grid electrode; and etching the first high-k dielectric layer, the adjusting layer, the second high-k dielectric layer and the metal grid electrode to form grid electrode stacks. Correspondingly, the invention further provides the semiconductor structure. The adjusting layer is formed between the two high-k dielectric layers, so that the adjusting layer is effectively prevented from being in direct contact with the metal grid electrode to degrade the performance of a semiconductor device.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the development of semiconductor device manufacturing technology, integrated circuits with higher performance and stronger functions require greater component density, and the size, size and space of each component, between components or each component itself need to be further reduced. Therefore, semiconductor The requirements for process control in the device manufacturing process are relatively high. [0003] The application of key core technologies of 22nm and below process integrated circuits is an inevitable trend in the development of integrated circuits, and it is also one of the topics that major international semiconductor companies and research organizations are competing to research and develop. Since the use of polysilicon electrodes will cause problems su...

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Problems solved by technology

[0006] However, the adjustment layer in the prior art is in direct contact with the gate conductor. Although the threshold voltage of the device is effectively adjusted, the reaction between the adjustment layer and the metal gate cannot be avoided.

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