Current diffusion layer, light emitting diode device and manufacturing method thereof

A technology of light-emitting diodes and current diffusion layers, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to uniformly diffuse current, reduce light extraction efficiency, and inability to uniformly diffuse, and achieve increased light extraction efficiency, reduced total reflection, The effect of uniform current spreading

Inactive Publication Date: 2012-12-12
DELTA ELECTRONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Based on the above, although the known solution can solve the problem of total reflection, its structure still has the problem of inability to spread uniformly because the current still takes the shortest path in transmission.
Therefore, when the light-emitting area of ​​the light-emitting diode device is increased, the current cannot be e

Method used

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  • Current diffusion layer, light emitting diode device and manufacturing method thereof
  • Current diffusion layer, light emitting diode device and manufacturing method thereof
  • Current diffusion layer, light emitting diode device and manufacturing method thereof

Examples

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no. 1 example

[0053] Please refer to image 3 , according to the first embodiment of the present invention, a method of manufacturing a light emitting diode device 20 includes step S11 to step S15. Please also refer to the following Figure 4A to Figure 4E shown.

[0054] Such as Figure 4A As shown, step S11 is to form an epitaxial stack 21 on the epitaxial substrate 211 , wherein the epitaxial stack 21 includes a first semiconductor layer 212 , a light emitting layer 213 and a second semiconductor layer 214 . The first semiconductor layer 212 is formed on the epitaxial substrate 211 , and then the light emitting layer 213 is formed on the first semiconductor layer 212 ; and then the second semiconductor layer 214 is formed on the light emitting layer 213 . Next, if Figure 4B As shown, step S12 is to remove part of the light emitting layer 213 and part of the second semiconductor layer 214 .

[0055] Such as Figure 4CAs shown, step S13 is to connect the current spreading layer 22 w...

no. 2 example

[0061] Please refer to Figure 5 , according to the second embodiment of the present invention, a method for manufacturing a light emitting diode device 30 includes steps S21 to S27. Please also refer to the following Figure 6A to Figure 6F.

[0062] like Figure 6A As shown, step S21 is the same as step S11 of the first embodiment, which forms the epitaxial stack 31 on the epitaxial substrate 311 . Wherein, the epitaxial stack 31 includes a first semiconductor layer 312 , a light emitting layer 313 and a second semiconductor layer 314 . The first semiconductor layer 312 is formed on the epitaxial substrate 311 , and then the light emitting layer 313 is formed on the first semiconductor layer 312 ; and then the second semiconductor layer 314 is formed on the light emitting layer 313 .

[0063] Step S22 connects the current spreading layer 32 to the epitaxial stack 31 . In this embodiment, the current spreading layer 32 is formed on the second semiconductor layer 314 by, ...

no. 3 example

[0072] Please refer to Figure 7 A method for manufacturing a light emitting diode device according to the third embodiment of the present invention includes steps S31 to S36. Please also refer to the following Figure 8A to Figure 8E .

[0073] like Figure 8A As shown, step S31 is the same as step S11 of the first embodiment, which forms an epitaxial stack 41 on the epitaxial substrate 111 . Wherein, the epitaxial stack 41 includes a first semiconductor layer 412 , a light emitting layer 413 and a second semiconductor layer 414 . The first semiconductor layer 412 is formed on the epitaxial substrate 411 , and then the light emitting layer 413 is formed on the first semiconductor layer 412 ; and then the second semiconductor layer 414 is formed on the light emitting layer 413 .

[0074] Step S32 is to connect the current spreading layer 42 with the epitaxial stack 41 . In this embodiment, the current spreading layer 42 is formed on the second semiconductor layer 414 by, ...

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Abstract

The invention discloses a light emitting diode device. The light emitting diode device comprises an epitaxial laminated layer and a current diffusion layer, wherein the epitaxial laminated layer is provided with a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence; the current diffusion layer is arranged on the first semiconductor layer of the epitaxial laminated layer; and the current diffusion layer is provided with a micro/nano coarsening structure and transparent conductive layers, wherein the micro/nano coarsening structure is provided with a plurality of hollow parts, and the transparent conductive layers cover the surface of the micro/nano coarsening structure and the hollow parts. In addition, the invention also discloses a manufacturing method for the light emitting diode device and the current diffusion layer with a micro-nanostructure.

Description

[0001] This application is a divisional application of the invention application with the filing date of June 5, 2007, the application number of 200710108876.8, and the title of "Current Diffusion Layer, Light Emitting Diode Device and Manufacturing Method". technical field [0002] The invention relates to a light-emitting diode device and a manufacturing method thereof, in particular to a current diffusion layer with a micro-nano structure, a light-emitting diode device and a manufacturing method thereof. Background technique [0003] A light-emitting diode (LED) device is a light-emitting element made of semiconductor materials. Since the light-emitting diode device is a cold light emitting device, it has the advantages of low power consumption, long component life, fast response speed, etc., and it is easy to make extremely small or array components due to its small size. Therefore, with the continuous advancement of technology in recent years, , and its application rang...

Claims

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Application Information

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IPC IPC(8): H01L33/14
Inventor 王宏洲薛清全陈世鹏陈朝旻陈煌坤
Owner DELTA ELECTRONICS INC
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