Nitride semiconductor structure and semiconductor light-emitting component

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure comprises a first-type doped semiconductor layer and a second-type doped semiconductor layer, a light-emitting layer is arranged between the first-type doped semiconductor layer and the second-type doped semiconductor layer, second-type dopants with the concentration larger than 5*1019 cm<-3> are doped into the second-type doped semiconductor layer, and the thickness of the second-type doped semiconductor layer is smaller than 30 nm. The semiconductor light-emitting component is characterized in that at least the nitride semiconductor structure, a first-type electrode and a second-type electrode are arranged on a substrate, and the first-type electrode and the second-type electrode supply power energy in a matched mode. In this way, semiconductor light emitting diodes can be good in light-emitting efficiency.

Description

technical field [0001] The invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to a second-type doped semiconductor layer with a high doping concentration (greater than 5×10 19 cm -3 ), and the nitride semiconductor structure and semiconductor light-emitting element with a thickness less than 30nm belong to the field of semiconductor technology. Background technique [0002] In general, a nitride light-emitting diode is first formed on a substrate with a buffer layer, and then epitaxially grows an n-type gallium nitride (n-GaN) layer, a light-emitting layer, and a p-type gallium nitride (n-GaN) layer on the buffer layer. p-GaN) layer; then, remove part of the p-type gallium nitride layer and part of the light-emitting layer by using lithography and etching processes until a part of the n-type gallium nitride layer is exposed; N-type electrodes and p-type electrodes are formed on the exposed part of the gallium ni...

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Problems solved by technology

[0003] As we all know, the brightness of light-emitting diodes depends on the internal quantum efficiency and light extraction efficiency, in which the internal quantum efficiency is the ratio of electrons to holes; According to the law of reflection physics, the critical angle at which the light-emitting diode of GaN can let light exit the surface and enter the air is only about 24 degrees, resulting in a light extraction efficiency of about 4.34%, so that the light generated by the light-emitting layer of the light-emitting diode is captured by GaN and The total reflection of the air interface is confined inside the light-emitting diode, resulting in significantly low light extraction efficiency; therefore, many studies have proposed methods to increase light extraction efficiency: for example, one is to perform surface treatment on the p-type gallium nitride layer to destroy Total reflection conditions, thereby improving the light extraction efficiency, and the surface treatment can be, for example, roughening the surface, changing the shape of the light-emitting diode, etc.; the second is to separate the n-type gallium nitride layer from the substrate, and t

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