Sectional wolfram wire mesh heater for sapphire single crystal furnace

Abstract

The invention provides a sectional wolfram wire mesh heater for a sapphire single crystal furnace, which is characterized in that the sectional wolfram wire mesh heater is formed by sequentially connecting an upper heater, a middle heater and a lower heater which are concentric in series, wherein both the upper part of the upper heater and the lower part of the middle heater are at least provided with three wolfram electrode claws which are uniformly distributed; each wolfram electrode claw is connected with two woven wolfram wire meshes in a welding mode; each two corresponding woven wolfram wire meshes are separated by a wolfram filament spring; the junction of the upper heater and the middle heater is provided with a wolfram ring; the lower heater is provided with three lower heater wolfram electrode claws which are uniformly distributed; the upper part of each lower heater wolfram electrode claw is welded at one end of one lower heater woven wolfram wire mesh; the other ends of the lower heater wolfram wire meshes are converged to the center fo the lower heater to be connected with a wolfram plate in a welding mode; binding wolfram filaments are wound on the wolfram electrode claws of each heater to form anodes; and the wolfram ring and the wolfram plate are all cathodes.

Description

technical field [0001] The invention relates to a tungsten mesh heater, in particular to a segmented tungsten mesh heater which is used in a sapphire single crystal furnace and can meet the gradient temperature field conditions required for sapphire single crystal growth. Background technique [0002] With the rapid development of the global new energy market, the LED industry has gradually become a new growth point of the energy industry, and has the ability to catch up with other energy-saving industries, showing a trend of rapid development worldwide. [0003] The sapphire single crystal furnace is an important crystal growth equipment in the LED industry chain. Since the sapphire single crystal grows slowly under high temperature conditions, good temperature gradient control is required to form a cold core, and a uniform and stable temperature field is required to achieve For the stable growth of single crystals, the temperature gradient controllable basis of the heater ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve a series of problems such as low yield, small size and low quality of sapphire single crystal growth due to the uncontrollability of the temperature gradient of a single heater and the inhomogeneity of the temperature field in the existing sapphire crystal growth furnace, and to provide A New and Reliable Segmented Welded Tungsten Wire Mesh Heater for Sapphire Single Crystal Furnaces

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