Infrared detection device and manufacturing method thereof

Abstract

The invention discloses an infrared detection device and a manufacturing method thereof and belongs to the field of semiconductor devices. The infrared detection device comprises a microbridge structure unit and a detection structure unit which is arranged on the microbridge structure unit; the detection structure unit comprises a first release protection layer and a second release protection layer which are sequentially arranged on the microbridge structure unit from the bottom up, and a transistor which is arranged between the first release protection layer and the second release protection layer; the transistor comprises electrode layers and semiconductor layers; a grid electrode, a source electrode, and a drain electrode in each electrode layer are positioned on the same layer; and the semiconductor layers comprise a grid semiconductor layer which corresponds to the grid electrodes in the electrode layers, a source electrode semiconductor layer which corresponds to the source electrodes in the electrode layers and a drain electrode semiconductor layer which corresponds to the drain electrodes in the electrode layers.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular, relates to an infrared detection device and a manufacturing method thereof. Background technique [0002] Micro Electro Mechanical Systems (MEMS) technology has many advantages such as tiny, intelligent, executable, integratable, good process compatibility and low cost, so it has been widely used in many fields including infrared detection technology. Infrared detection device is a specific MEMS product in the field of infrared detection technology. It uses a sensitive material detection layer such as amorphous silicon or vanadium oxide to absorb infrared rays, thereby causing changes in its resistance, thereby realizing thermal imaging functions. . [0003] Figure 12 It is a schematic structural diagram of an infrared detection device in the prior art. like Figure 12 As shown in the figure, the infrared detection device in the prior art consists of a thermal layer 1201...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an infrared detection device and its manufacturing method to solve the problem of high cost caused by using sensitive materials for infrared detection in the prior art.

Images