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Shallow trench isolation structure and manufacturing method thereof

A technology of isolation structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of easy transfer of electrons and leakage, and achieve the effect of avoiding electronic transfer and improving product reliability

Inactive Publication Date: 2013-01-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The purpose of the present invention is to provide a shallow trench isolation structure and its manufacturing method to solve the problems that the existing shallow trench isolation structure is prone to leakage, breakdown and electron transfer on both sides of the shallow trench isolation structure

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  • Shallow trench isolation structure and manufacturing method thereof
  • Shallow trench isolation structure and manufacturing method thereof
  • Shallow trench isolation structure and manufacturing method thereof

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Embodiment Construction

[0031] The shallow trench isolation structure proposed by the present invention and its manufacturing method will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] Please refer to figure 2 , which is a schematic diagram of a shallow trench isolation structure according to an embodiment of the present invention. Such as figure 2 As shown, the shallow trench isolation structure 210 includes:

[0033] Isolation groove 200, said isolation groove 200 comprises the isolation groove upper part 201 close to the isolation groove 200 opening and the isolation groove lower part 202 away from the i...

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Abstract

The invention provides a shallow trench isolation structure and a manufacturing method thereof. An isolation groove lower part, which is far away from an opening of an isolation groove, in the shallow trench isolation structure is spherical, namely the edge corner of the shallow trench isolation structure is relatively smooth, so that the problems of creepage and puncture are solved, and the reliability of a product is improved. Furthermore, the isolation groove lower part is spherical, so that under the condition that the isolation groove has the same depth, a distance between electrons on two sides of the shallow trench isolation structure is relatively far, and an electron transferring path is relatively long; and therefore, a phenomenon of electron transferring on the two sides of the shallow trench isolation structure can be effectively avoided.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing process, in particular to a shallow trench isolation structure and a manufacturing method thereof. Background technique [0002] As the size of integrated circuits decreases, the devices that make up the circuits must be placed more densely to fit the limited space available on the chip. Since current research is devoted to increasing the density of active devices per unit area of ​​the silicon substrate, effective isolation between circuits becomes more important. The methods for forming isolation regions in the prior art mainly include local oxidation isolation (LOCOS) process or shallow trench isolation (STI) process. [0003] The LOCOS process is to deposit a layer of silicon nitride on the surface of the wafer, and then perform etching to oxidize and grow silicon dioxide on part of the recessed area, and the active device is generated in the area determined by the silicon nitride. For ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
Inventor 卜伟海
Owner SEMICON MFG INT (SHANGHAI) CORP