IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function

A temperature sensor, current sensor technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problem of not being able to accurately reflect the chip junction temperature in real time, difficult chip temperature and current detection and monitoring, high-power semiconductor devices - IGBT Unrealistic problems, to achieve the effect of good protection, improved life and reliability, and accurate methods

Active Publication Date: 2013-01-16
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the temperature sensor is far away from the chip, it cannot accurately reflect the real junction temperature of the chip in real time; for the current sensor, its detection accuracy is closely related to the accuracy of the standard resistor
Moreover, it is difficult to detect and monitor the ...

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  • IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function
  • IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function
  • IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function

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Embodiment Construction

[0034] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] Such as figure 1 and figure 2 Shown, is the planar structure of the IGBT chip of the present invention integrated temperature and current sensing function, and it comprises chip 5, and the edge of chip 5 is IGBT terminal protection area 4, and the middle part of chip 5 has included IGBT cell area 1, Current sensing area 2 and temperature sensing area 3. Wherein, the front side of the chip 5 is provided with an IGBT chip gate 11, an IGBT chip emitter 12, a current sensor negative pole 22, a temperature sensor positive pole 31 and a temperature sensor negative pole 32, and the metallization layer on the surface of the chip 5 is etched between each electrode And spaced out. The IGBT chip gate 11 and the IGBT chip emitter 12 are located in the IGBT cell area 1 , the current sensor negative electrode 22 is located in the current...

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Abstract

The invention relates to an IGBT (insulated gate bipolar transistor) chip integrating a temperature and current sensing function, comprising a chip. The edge of the chip is provided with an IGBT terminal protection area, the middle part comprises an IGBT cellular area, a current sensing area and a temperature sensing area, and the front surface is provided with an IGBT chip grid electrode, IGBT chip emitting electrode, a current sensor negative electrode, a temperature sensor positive electrode and a temperature sensor negative electrode; the electrodes are separated by etching the metalized layer on the surface of the chip; the IGBT chip grid electrode and the IGBT chip emitting electrode are arranged in the IGBT cellular are; the current sensor negative electrode is arranged in the current sensing area; the temperature sensor positive electrode and the temperature sensor negative electrode are arranged in the temperature sensing area; and the back surface of the chip is provided with an IGBT chip collection electrode or current sensor positive electrode in the current sensing area, wherein the IGBT chip collection electrode and the current sensor positive electrode are same. The IGBT chip has the advantages of simpler and compacter structure and wider range of application. The temperature and current information of the chip can be accurately monitored and acquired when the chip works so that the chip in the module can be protected better.

Description

technical field [0001] The invention mainly relates to the field of IGBT chip design, in particular to an IGBT chip integrated with temperature and current sensing functions. Background technique [0002] Insulated gate bipolar transistor (IGBT) has the characteristics of on-state voltage drop, large current capacity, high input impedance, fast response and simple control, and is widely used in industry, information, new energy, medicine, transportation, military and aviation fields . [0003] With the continuous improvement of IGBT module packaging technology and the continuous improvement of application requirements, various intelligent power modules (IPM) are emerging. It is based on the common IGBT module, and the drive control circuit and protection circuit are packaged inside the module, so as to improve the reliability of the module, reduce the loss, reduce the volume and increase the production capacity. In order to fully reflect the advantages of the intelligent p...

Claims

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Application Information

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IPC IPC(8): H01L23/544H01L29/739H01L27/082
CPCH01L2224/0603
Inventor 刘国友覃荣震黄建伟
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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