IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function

Abstract

The invention relates to an IGBT (insulated gate bipolar transistor) chip integrating a temperature and current sensing function, comprising a chip. The edge of the chip is provided with an IGBT terminal protection area, the middle part comprises an IGBT cellular area, a current sensing area and a temperature sensing area, and the front surface is provided with an IGBT chip grid electrode, IGBT chip emitting electrode, a current sensor negative electrode, a temperature sensor positive electrode and a temperature sensor negative electrode; the electrodes are separated by etching the metalized layer on the surface of the chip; the IGBT chip grid electrode and the IGBT chip emitting electrode are arranged in the IGBT cellular are; the current sensor negative electrode is arranged in the current sensing area; the temperature sensor positive electrode and the temperature sensor negative electrode are arranged in the temperature sensing area; and the back surface of the chip is provided with an IGBT chip collection electrode or current sensor positive electrode in the current sensing area, wherein the IGBT chip collection electrode and the current sensor positive electrode are same. The IGBT chip has the advantages of simpler and compacter structure and wider range of application. The temperature and current information of the chip can be accurately monitored and acquired when the chip works so that the chip in the module can be protected better.

Description

technical field [0001] The invention mainly relates to the field of IGBT chip design, in particular to an IGBT chip integrated with temperature and current sensing functions. Background technique [0002] Insulated gate bipolar transistor (IGBT) has the characteristics of on-state voltage drop, large current capacity, high input impedance, fast response and simple control, and is widely used in industry, information, new energy, medicine, transportation, military and aviation fields . [0003] With the continuous improvement of IGBT module packaging technology and the continuous improvement of application requirements, various intelligent power modules (IPM) are emerging. It is based on the common IGBT module, and the drive control circuit and protection circuit are packaged inside the module, so as to improve the reliability of the module, reduce the loss, reduce the volume and increase the production capacity. In order to fully reflect the advantages of the intelligent p...

AI Technical Summary

Problems solved by technology

However, since the temperature sensor is far away from the chip, it cannot accurately reflect the real junction temperature of the chip in real time; for the current sensor, its detection accuracy is closely related to the accuracy of the standard resistor

Moreover, it is difficult to detect and monitor the temperature and current of each chip by integrating temperature and current sensors in the module

At present, semiconductor current detection sensors mostly use the Hall effect or try to make all the current of the device flow through the sensor, but it is not realistic for high-power semiconductor devices - IGBTs

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