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Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor

A cu-ga-sb-te, thermoelectric semiconductor technology, applied in non-metallic elements, inorganic chemistry, selenium/tellurium compounds, etc., can solve the problem of low electrical conductivity of materials, low carrier concentration, and poor thermoelectric performance of alloys and other problems, to achieve the effect of low cost and simple process

Inactive Publication Date: 2014-05-21
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But at this temperature, CuGaTe 2 The thermoelectric performance of the alloy is not good, it is difficult to make thermoelectric devices for medium temperature
The main reason is that in this type of material, the carrier concentration is not high and the conductivity of the material is too low
However, such semiconductors have inherent defects in the

Method used

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  • Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor
  • Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor
  • Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] According to the chemical formula CuGaTe 2 Cu, Ga and Te elements with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes. The smelting synthesis temperature is 900-1100°C, and the smelting synthesis time is 20-28 hours. If the preferred synthesis temperature is 1000°C, the preferred synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled in the furnace to 350-450°C, and then kept at this temperature for 240 hours for annealing. Quenching in water after annealing. Quenched CuGaTe 2 The ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 40-60MPa. For example, the preferred sintering temperature is 450°C and the sintering pressure is 50MPa. The sintered C...

Embodiment 2

[0024] According to the chemical formula Cu 1-x GaSb x Te 2 (x=0~0.1) Weigh Cu, Ga, Sb and Te elements with a purity greater than 99.999wt.% and place them in vacuum quartz tubes respectively, such as Cu 1-x GaSb x Te 2 , that is, x=0.02. The smelting synthesis temperature is 900-1100°C, and the smelting synthesis time is 20-28 hours. If the preferred synthesis temperature is 1000°C, the preferred synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled in the furnace to 350-450°C, and then kept at this temperature for 240 hours for annealing. Quenching in water after annealing. Cu after quenching 1-x GaSb x Te 2 The ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 40-60MPa. For ex...

Embodiment 3

[0026] According to the chemical formula Cu 1-x GaSb x Te 2 (x=0~0.1) Weigh Cu, Ga, Sb and Te elements with a purity greater than 99.999wt.% and place them in vacuum quartz tubes respectively, such as Cu 1-x GaSb x Te 2 , that is, x=0.05. The smelting synthesis temperature is 900-1100°C, and the smelting synthesis time is 20-28 hours. If the preferred synthesis temperature is 1000°C, the preferred synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled in the furnace to 350-450°C, and then kept at this temperature for 240 hours for annealing. Quenching in water after annealing. Cu after quenching 1-x GaSb x Te 2 The ingot is crushed and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 40-60MPa. For ex...

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Abstract

The invention relates to the field of thermoelectric materials, in particular to a CuGaSbTe2 base thermoelectric semiconductor with a chalcopyrite structure, and a preparation process for the CuGaSbTe2 base thermoelectric semiconductor. The design key points are that parts of Cu elements in the CuGaSbTe2 base thermoelectric semiconductor are substituted with Sb elements in an equimolar way; and the Sb elements account for 0 to 0.025 molar percent of the CuGaSbTe2 base thermoelectric semiconductor, and the Cu elements account for 0.225 to 0.25 molar percent of the CuGaSbTe2 base thermoelectric semiconductor. The chemical formula of the CuGaSbTe2 base thermoelectric semiconductor is Cu1-xGaSbxTe2, wherein x is more than 0 and less than or equal to 0.1. The CuGaSbTe2 base thermoelectric semiconductor is prepared by the conventional powder metallurgic method, and a process is simple; the Cu elements in the CuGaSbTe2 base thermoelectric semiconductor are substituted with the metal Sb elements in an equimolar way, and the CuGaSbTe2 base thermoelectric semiconductor is low in cost; and the material has the characteristic of environment-friendliness, does not have noise and is suitable to be used as a green energy resource material.

Description

technical field [0001] The invention relates to a thermoelectric semiconductor material, which is a Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with a chalcopyrite structure and a preparation process thereof. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilization power supply, and small power supply devices in remote areas. [0003] The comprehensive performance of thermoelectric materials is described by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00
Inventor 崔教林李亚鹏
Owner NINGBO UNIVERSITY OF TECHNOLOGY