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Non-volatile random access memory and operation method thereof

A non-volatile random, operating method technology, applied in the field of micro-nano electronics, to achieve the effect of high speed, low power consumption, and reduced power consumption

Active Publication Date: 2013-01-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above goals often have certain contradictions, and it is difficult to satisfy all of them.

Method used

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  • Non-volatile random access memory and operation method thereof
  • Non-volatile random access memory and operation method thereof
  • Non-volatile random access memory and operation method thereof

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Embodiment 1

[0029] The feasibility of the above storage device will be described by taking the phase change memory as an example.

[0030]Phase-change memory relies on phase-change materials such as chalcogenides, which can stably and reversibly transition between crystalline and amorphous phases. The two crystalline phases present different resistance values, that is, the crystalline state (Set state) represents a low resistance state, corresponding to the logical value '0' of the memory cell, and the amorphous state (Reset state) represents a high resistance state, corresponding to the memory cell Logical value '1'. Writing '0' to the phase change memory is called a set operation, and writing a '1' operation is called a reset operation.

[0031] figure 2 Shows the temperature of the phase change material as a function of time during the Set and Reset operations. When performing the Set operation, apply a voltage or current pulse with a wider width and smaller amplitude, so that the ...

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Abstract

The invention provides a non-volatile random access memory (100) and an operation method thereof. The non-volatile random access memory (100) comprises a memory cell array (110) composed of multiple memory cell blocks (111), and a peripheral circuit connected to the memory cell array (110). The peripheral circuit comprises an address decoding circuit (120) for selecting the corresponding memory cell block according to address input information, a block operation-mode information register (130) for storing operation mode information of all the memory cell blocks (111) and carrying out re-writing under the action of a control signal (160), a writing driving circuit (140) for outputting a writing operation mode to the memory cell array (110) according to the operation mode information stored in the block operation-mode information register (130), and a reading circuit (150) for outputting a reading operation mode to the memory cell array (110) according to the operation mode information stored in the block operation-mode information register (130). The non-volatile random access memory is compatible with two phase change memories having different operation modes, simplifies an interface design, saves a design area, reduces power consumption and improves a speed.

Description

technical field [0001] The invention relates to the technical field of micro-nano electronics, in particular to a non-volatile random memory device and an operation method thereof. Background technique [0002] The memory is a component used to store information (programs and data) used when the microcomputer works. It is precisely because of the memory that the computer has the information memory function. Early memory can be divided into random access memory chip (RAM) and read-only memory chip (ROM) according to the access method (reading and writing method). The information in ROM can only be read out, but cannot be modified or deleted by the operator, so it is generally used to store fixed programs, such as monitoring programs, assembler programs, etc., and to store various forms. RAM is mainly used to store various on-site input and output data, intermediate calculation results, and to exchange information with external memory and as a stack. Its memory cells can be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/02G11C16/06G11C11/56
Inventor 陈小刚许林海陈一峰李顺芬丁晟陈后鹏宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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