a current sensor
A current sensor and current wire technology, applied in the field of sensors, can solve the problems of high production cost, poor product consistency, poor anti-interference ability of external magnetic field, etc., and achieve the effect of reduced production cost, good consistency, and enhanced anti-interference ability
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Embodiment 1
[0036] The current sensor provided by this embodiment includes a magnetoresistive integrated chip 1, an operational amplifier 2, a resistor 3, a printed circuit board 4 and a U-shaped current lead 5 to be measured, such as figure 2 shown. The magnetoresistance integrated chip 1, the operational amplifier 2 and the resistor 3 are fixed on one side of the printed circuit board 4, and the current wire 5 to be measured is fixed on the other side of the printed circuit board 4, and the position of the magnetoresistance integrated chip 1 is related to the current to be measured. The center positions of the wires 5 are opposite. Such as image 3 The output terminal of the bridge formed by the magnetoresistive elements of the chip unit shown in the magnetoresistance integrated chip 1 is connected to the input terminal of the operational amplifier 2, and a free end of the compensation wire layer of the magnetoresistance integrated chip 1 is connected to the output of the operational ...
Embodiment 2
[0044] The structure of the current sensor provided in this embodiment is the same as that of the current sensor in Embodiment 1.
[0045] The magnetoresistive integrated chip 1 for the current sensor provided in this embodiment includes, for example, four chip units, that is, the first chip unit 121, the second chip unit 122, the third chip unit 123 and the fourth chip unit 124, such as Figure 6 shown. The structures of the first chip unit 121 , the second chip unit 122 , the third chip unit 123 and the fourth chip unit 124 are all the same, and are all multi-layer film structures.
[0046] Taking the first chip unit 121 as an example, the film layer structure of each chip unit of the magnetoresistive integrated chip of this embodiment is introduced. Such as Figure 7 As shown, the first chip unit 121 includes a first soft magnetic layer 1211 , a compensation wire layer 1212 , a second soft magnetic layer 1213 , a third soft magnetic layer 1214 and a magnetoresistive eleme...
Embodiment 3
[0052] The structure of the current sensor provided in this embodiment is the same as that of the current sensor in Embodiment 1.
[0053] The magnetoresistive integrated chip 1 for the current sensor provided in this embodiment includes, for example, four chip units, that is, the first chip unit 131, the second chip unit 132, the third chip unit 133 and the fourth chip unit 134, such as Figure 8 shown. The structures of the first chip unit 131 , the second chip unit 132 , the third chip unit 133 and the fourth chip unit 134 are all the same, and are all multi-layer film structures.
[0054] Taking the first chip unit 131 as an example, the film layer structure of each chip unit of the magnetoresistive integrated chip of this embodiment is introduced. Such as Figure 9 As shown, the first chip unit 131 includes a soft magnetic layer 1311 , a compensation wire layer 1312 and a magnetoresistive element 1313 . The soft magnetic layer 1311 includes a first bottom soft magnetic...
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