Semiconductor laser element and manufacturing method of the same

Abstract

Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges.

Description

technical field [0001] The present disclosure particularly relates to a semiconductor laser element suitable for use as an edge-emitting semiconductor laser and a method of manufacturing the same. Background technique [0002] The higher the output of the semiconductor laser becomes, the greater the amount of heat generated at the edge of the resonator, possibly resulting in a shorter lifetime due to damage to the edge. Damage to edges occurs in the following mechanisms. [0003] That is, when current is injected, non-radiative recombination current flows via the surface level present on the edge. The carrier density is higher near the edge than inside the laser, thus resulting in a large photoabsorption. This light absorption generates heat, reducing the bandgap energy near the main emission edge and causing even greater light absorption. This positive feedback process induces an excessive increase in temperature at the main emission edge with high optical power density....

AI Technical Summary

Problems solved by technology

[0006] However, moving the p-side electrode back from the edge makes it difficult to achieve high output beyond a given level due to the above deteriorated effectiveness in terms of heat dissipation

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