Diode-clamped three-level insulated gate bipolar translator (IGBT) drive protection circuit, diode-clamped three-level (IGBT) drive module, and diode-clamped three-level topology device

Abstract

The invention discloses a diode-clamped three-level insulated gate bipolar translator (IGBT) drive protection circuit, a diode-clamped three-level (IGBT) drive module, and a diode-clamped three-level topology device. Compared with the prior art, an IGBT shut-off circuit and an IGBT blocking circuit are removed from an inner tube IGBT drive protection circuit; the on and off states of the IGBT are controlled by a digital signal processing circuit, so that the inner tube IGBT cannot be turned off arbitrarily; an outer tube IGBT is controlled to be turned off before the inner tube IGBT; therefore, generatrix voltage cannot be loaded to the inner tube IGBT to damage the inner tube IGBT; and the inner tube IGBT is effectively protected. Moreover, by the inner tube IGBT drive protection circuit, the IGBT shut-off circuit and the IGBT blocking circuit are removed; a special drive module is not used; the cost is saved; simultaneously, the area occupied by a drive unit is reduced; and the drive protection circuit is easy to assemble.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a diode-clamped three-level IGBT drive protection circuit, a module and a topological device thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite device composed of a power transistor and a power field effect transistor. Due to its high input impedance, fast working speed, high withstand voltage and normal operation at tens of KHz In the frequency range, it occupies a dominant position in power electronic devices that use diode-clamped three-level topologies. For example, medium and high voltage inverters, wind power, SVG, UPS, etc. mostly use IGBTs as the main power switching devices. Diode-clamped three-level topology circuit such as figure 1 As shown, T1, T2, T3, and T4 are IGBTs, T1 and T4 are referred to as outer tubes, T2 and T3 are referred to as inner tubes, D1, D2, D3, and D4 are freewheeling diodes connected in parall...

AI Technical Summary

Problems solved by technology

[0004] During the research and practice of this circuit, the inventors of the present invention found that because the clamping diode in the diode-clamped three-level topology circuit can only ensure that the outer tube is clamped reliably, but the inner tube will not be clamped, Therefore, when a short-circuit fault occurs, if the inner tube is shut off before the outer tube or at the same time as the outer tube, the bus voltage will be applied to the inner tube and the inner tube will be damaged.

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