Method for realizing low-temperature ohm annealing of P type SiC materials

A high-temperature rapid annealing and alloying technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., to achieve the effect of avoiding quality, small surface roughness, and high repeatability

Active Publication Date: 2013-02-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology

However, the Schottky barrier height of SiC is weakly dependent on the work functi

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  • Method for realizing low-temperature ohm annealing of P type SiC materials
  • Method for realizing low-temperature ohm annealing of P type SiC materials

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[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] The present invention proposes a two-step annealing method to realize low-temperature ohmic alloy annealing of P-type SiC materials, by controlling the alloy annealing step, two-step annealing temperature and time, single-step heating rate, single-step cooling rate, and staged cooling temperature The point is to reduce the reaction temperature between the Ti / Al-based contact metal and the P-type SiC interface to achieve good ohmic contact of the P-type SiC material at a lower annealing temperature.

[0021] In order to obtain a good ohmic contact of P-type SiC materials, high-temperature alloy annealing technology has been widely used. Generally, the alloy annealing of Ti / Al-based and silicide ohmic electrodes is be...

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Abstract

The invention discloses a method for realizing low-temperature ohm annealing of P type SiC materials. According to TiAl-based metalizing system, in the method, two steps of pre-annealing and high-temperature rapid annealing are adopted to realize the low-temperature ohm contact of the P type SiC materials, wherein for the pre-annealing in the first step, an Al alloy system is formed in the pre-annealing mode, and the interface reaction between TiAl-based ohmic contact metal and a P type SiC is promoted, so that an interface transition layer is formed; for the high-temperature rapid annealing in the second step, the reaction of Ti, Al and SiC is realized under the general rapid annealing temperature by utilizing an interface reaction catalyst in the pre-annealing process, so that a carbide or silicide transition layer with low potential barrier and high carrier density is formed. According to the two-step annealing method provided by the invention, the alloy annealing temperature can be reduced effectively, and the method is also suitable for other semiconductor materials and particularly suitable for the field of ohmic contact of wide gap materials.

Description

technical field [0001] The invention relates to the technical field of annealing a P-type wide bandgap material ohmic contact alloy, in particular to a method for realizing low-temperature ohmic alloy annealing of a P-type SiC material in a two-step annealing manner. Background technique [0002] The acquisition of good ohmic contact quality of wide-bandgap silicon carbide (SiC) materials is a key factor for realizing high-temperature, high-voltage, high-frequency and high-power applications of SiC devices. However, most of the alloy annealing of Ti / Al-based and silicide ohmic electrodes reported in the literature is between 900-1180 °C. High-temperature annealing will not only cause surface roughness, but may also lead to a decrease in device performance. Experiments have shown that the smaller the surface roughness of the sample obtained by atomic force microscopy (AFM) or scanning electron microscopy (SEM), the better the ohmic contact quality. Using the two-step anneali...

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Application Information

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IPC IPC(8): H01L21/04
Inventor 汤益丹刘可安申华军白云李博王弋宇刘新宇李诚瞻史晶晶
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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