A method for improving etching uniformity in through-silicon via process
A through-silicon hole and uniformity technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as uneven etching, and achieve the goal of improving uniformity, improving uniformity, and improving passivation treatment uniformity Effect
Active Publication Date: 2016-02-10
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF2 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] The invention provides a method for improving the uniformity of etching in the through-silicon hole process, which is used to improve the problem of uneven etching caused by uneven passivation in the through-silicon hole process
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0029] Specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0030] The invention discloses a vacuum processing device for performing a through-silicon via (TSV) process. The vacuum processing device is provided with an electrostatic chuck (ESC), and the electrostatic chuck can be set at different temperatures in its edge area and central area. , and provide different temperature environments for the wafer fixed on the electrostatic chuck in the edge area and the central area, so as to improve the uniformity of wafer etching in the through-silicon via process.
[0031] Such as figure 1 Shown is an embodiment of an electrostatic chuck of the present invention. The electrostatic chuck includes: an electrostatic chuck body 2 , a first temperature regulator 5 , a second temperature regulator 4 , and a temperature control module 3 .
[0032] The electrostatic chuck body 2 is stably arranged on the base of th...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for improving etching uniformity in a silicon piercing process. The method comprises the steps of: in the silicon piercing process, setting the temperature of an edge region of an electrostatic chuck to be higher than the temperature of a central region of the electrostatic chuck; distributing the temperature of a wafer on the electrostatic chuck as: the temperature of the edge region is higher than the temperature of the central region; while implementing a passivation process in the silicon piercing process, reducing a polymer thickness formed from passivation of the edge region of the wafer, and improving the passivation uniformity of a polymer between the edge region and the central region of the wafer. According to the method for improving the etching uniformity in the silicon piercing process, since different temperatures are provided for the central region and the edge region of the electrostatic chuck, the temperature of the edge region of the wafer is higher than the temperature of the central region in the silicon piercing process, therefore, the thickness of the polymer which is generated from passivation on the edge region of the wafer is reduced, and the passivation uniformity between the edge region and the central region of the wafer is improved, so that the etching uniformity of the wafer in the silicon piercing process is improved.
Description
technical field [0001] The invention relates to an etching uniformity control technology in a semiconductor preparation process flow, in particular to a method for improving the etching uniformity in a silicon through-hole process. Background technique [0002] The most commonly used etching processes for through-silicon vias (TSVs) are the Bosch process and the Aviza process. [0003] Bosch (Bosch) deep reactive ion etching (Deep ReactiveIonEtch, DRIE) process is a process that can meet the challenge of etching TSV. The corrosion rate makes it have high productivity and relatively low manufacturing cost. [0004] The Bosch-style DRIE process has been used in MEMS manufacturing for many years. This process has almost become synonymous with MEMS etching, and it is also a mature method for MEMS to fabricate deep silicon etched structures. The Bosch-style DRIE process is also becoming the mainstream process for 3D through-hole manufacturing, and a lot of experience gained in ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/683H01L21/67
Inventor 严利均黄秋平
Owner ADVANCED MICRO FAB EQUIP INC CHINA