Film forming apparatus

Abstract

Disclosed is a film formation device equipped with a raw material gas discharge unit which has a structure that can be manufactured more readily than those of conventional film formation devices and can discharge multiple raw material gases onto a substrate while cooling the raw material gases without causing the contamination of the raw material gases with each other. The raw material gas discharge unit (20) comprises: a hollow discharge vessel (21) which has multiple discharge holes (22) formed on the wall thereof; and multiple pipes (31a1 to 31a3, 31b1 to 31b3) which are arranged in a hollow part of the discharge vessel (21), and each of which has a through hole (32a1 to 32a3, 32b1 to 32b3) on the outer periphery side surface thereof, wherein the outer periphery part of each of the through-holes (32a1 to 32a3, 32b1 to 32b3) formed on the outer periphery side surface of the pipes is in closely contact with the inner surface of the wall of the vessel, and the through-holes (32a1 to 32a3, 32b1 to 32b3) are communicated with the discharge hole (22). When a cooling medium is circulated in the hollow part of the discharge vessel (21), raw material gases that pass through the pipes (31a1 to 31a3, 31b1 to 31b3) can be cooled.

Description

technical field [0001] The invention relates to a film forming device, in particular to the technical field of CVD. Background technique [0002] Currently, gallium nitride (GaN) is used as a material for electronic components such as light emitting diodes. In order to produce a gallium nitride crystal, a film forming apparatus using a metal organic vapor phase growth (MOCVD) method is used. [0003] Figure 8 An internal configuration diagram of a conventional film formation apparatus 110 used in the MOCVD method is shown. [0004] The film forming apparatus 110 has a vacuum chamber 112 , a substrate holding table 141 holding a substrate 140 , a first pipe 132 a through which a first source gas passes, and a second pipe 132 b through which a second source gas passes. [0005] The vacuum evacuation device 113 is connected to the vacuum chamber 112, and the inside of the vacuum chamber 112 is configured to be evacuated. [0006] The first piping 132 a and the second piping...

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Problems solved by technology

[0016] In order to satisfy the above conditions, the structure of the raw material gas release part of the film forming device must be complex, such as having a layered structure and tens of thousands of release holes formed by thin tubes, and there is a problem that it is difficult to manufacture.

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