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flash controller

A flash memory controller, flash memory technology, applied in static memory, digital memory information, instruments, etc., can solve the problem that it is difficult to take into account wear resistance and data reliability at the same time, so as to improve wear resistance, meet costs, and improve reliability. degree of effect

Active Publication Date: 2016-04-20
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Due to the above-mentioned characteristics, it is difficult for existing flash memory devices to balance the performance of wear resistance and data reliability when pursuing the goal of low cost and high capacity.

Method used

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Embodiment Construction

[0017] Embodiments of the present invention will be described below in conjunction with related figures. In the drawings, the same reference numerals indicate the same or similar components or process steps.

[0018] Certain terms are used in the specification and subsequent claims to refer to particular components. It should be understood by those skilled in the art that the same component may be called by different terms. This specification and subsequent patent applications do not use the difference in name as a way to distinguish components, but use the difference in function of components as a basis for distinction. "Includes" mentioned throughout the specification and subsequent claims is an open term, so it should be interpreted as "including but not limited to...". In addition, the term "coupled" herein includes any direct and indirect means of connection. Therefore, if it is described in the text that a first device is coupled to a second device, it means that the ...

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Abstract

The invention provides a flash memory controller. The flash memory controller comprises a recording medium and a processing circuit. When the data volume in a flash memory module is smaller than a first threshold, the processing circuit can control a read-write circuit of the flash memory module so as to program a target data block by using programmed critical voltage in a first voltage range and further write data into the target data block. When the data volume in a flash memory module is greater than a second threshold, the processing circuit controls the read-write circuit so as to program the target data block by using a programmed critical voltage in a second voltage range and write data into the target data block, wherein the second threshold is greater than the first threshold, the first voltage range is 50% smaller than the second voltage range. With the structure, the electricity consumed for writing the data into the data block can be reduced, and the wear resistance capability and data reliability of the flash memory module can be more effectively improved.

Description

technical field [0001] The invention relates to flash memory technology, in particular to a flash memory controller capable of improving wear resistance and data reliability of a flash memory module. Background technique [0002] Flash memory is widely used in many applications, such as solid-state disks (SSDs), memory cards, digital cameras, digital video cameras, multimedia players, mobile phones, computers, and many other electronic devices. [0003] The flash memory can be realized by single-level cells (SLC), multi-level cells (MLC), triple-level cells (TLC) or higher-level cells. A single-level storage unit has higher performance in terms of access speed and data reliability. Multi-level storage units, three-level storage units, and higher-level storage units can provide higher storage capacity at a lower cost, but the durability and wear capacity are not as good as single-level storage units . [0004] Due to the above-mentioned characteristics, it is difficult for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
Inventor 杨宗杰郭郡杰林璟辉沈扬智
Owner SILICON MOTION INC (CN)
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