Semiconductor device and manufacture method thereof

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of inaccurate control and inability to control the height of fins, and achieve the effect of accurately controlling the width of the channel

Active Publication Date: 2013-03-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method can only indirectly control the height of the formed fins by controlling the process parameters, but cannot directly control the height of the fins, so this control is not accurate enough

Method used

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  • Semiconductor device and manufacture method thereof
  • Semiconductor device and manufacture method thereof
  • Semiconductor device and manufacture method thereof

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Embodiment Construction

[0023] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0024] Various structural views and cross-sectional views of semiconductor devices according to embodiments of the present invention are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers wit...

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Abstract

The invention discloses a semiconductor device and a manufacture method thereof. The semiconductor device comprises a substrate, a fin and a gate stack, wherein the fin is formed on the substrate and is connected to the substrate via a semiconductor layer; the gate stack strides over the fin; and the fin and the semiconductor layer are provided with different materials and have etching selectivity relative to each other. According to the embodiment of the invention, due to the etching selectivity between the fin material and the semiconductor layer material below the fin, composition of the fin can be accurately stopped on the semiconductor layer, thus the fin height can be well controlled and accordingly the finally obtained channel width of the device is controlled.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a semiconductor device capable of accurately controlling the height of fins and a manufacturing method thereof. Background technique [0002] Fin field-effect transistors (FinFETs) have attracted much attention due to their well-controlled short-channel effects. figure 1 A perspective view of an example FinFET is shown in . Such as figure 1 As shown, the FinFET includes: a bulk Si substrate 100; a fin 101 formed on the bulk Si substrate 100; a gate stack 102 straddling the fin 101, and the gate stack 102 includes, for example, a gate dielectric layer and a gate electrode layer ( not shown); and isolation layers (such as SiO 2 )103. In this FinFET, under the control of the gate electrode, a conductive channel is created in the fin 101 , specifically in the three sides of the fin 101 (the left, right and top sides in the figure). That is, the portion of the fin 101 below t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/08
CPCH01L29/66795H01L29/165
Inventor 朱慧珑尹海洲骆志炯
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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