A method of silver-silicon eutectic welding chip
A eutectic welding and chip technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as high thermal resistance and resistance, unsuitable power device welding, and low gold-silicon welding temperature. , to achieve the effect of controlling the melting range
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Embodiment 1
[0025] The method for silver-silicon eutectic welding silicon chip, concrete steps are:
[0026] 1) On the surface 9 of the silicon chip to be welded, a layer of chip titanium metal layer 3 is grown by sputtering, and its thickness is 1500 angstroms, and then a layer of chip titanium metal layer 3 is grown by sputtering on the surface 10 of the chip titanium metal layer. A chip nickel metal layer 4 with a thickness of 2000 angstroms, and finally a chip silver metal layer 5 grown on the surface 11 of the chip nickel metal layer by sputtering, with a thickness of 50000 angstroms;
[0027] 2) A layer of carrier nickel metal layer 7 is grown by sputtering on the surface 15 of the carrier, and its thickness is 3000 angstroms, and then a layer of carrier silver metal is grown by sputtering on the surface 14 of the carrier nickel metal layer layer 6 having a thickness of 70,000 angstroms;
[0028] 3) stack the silicon chip 2 processed in step 1) on the carrier 8 processed in step 2)...
Embodiment 2
[0034] The method for silver-silicon eutectic welding silicon chip, concrete steps are:
[0035] 1) On the surface 9 of the silicon chip to be welded, a layer of chip titanium metal layer 3 is grown by evaporation, and its thickness is 2000 angstroms, and then a layer of chip is grown on the surface 10 of the chip titanium metal layer by evaporation The nickel metal layer 4 has a thickness of 3000 angstroms, and finally a chip silver metal layer 5 is grown on the surface 11 of the chip nickel metal layer by evaporation, and its thickness is 80000 angstroms;
[0036] 2) On the surface 15 of the carrier, a layer of carrier nickel metal layer 7 is grown by electroplating, and its thickness is 8000 angstroms, and then on the surface 14 of the carrier nickel metal layer, a layer of carrier silver metal layer 6 is grown by electroplating , with a thickness of 100,000 angstroms;
[0037] 3) stack the silicon chip 2 processed in step 1) on the carrier 8 processed in step 2), so that ...
Embodiment 3
[0042] The method for silver-silicon eutectic welding silicon chip, concrete steps are:
[0043] 1) On the surface 9 of the silicon chip to be welded, a layer of chip titanium metal layer 3 is grown by sputtering, and its thickness is 1800 angstroms, and then on the surface 10 of the chip titanium metal layer, a layer of chip titanium metal layer is grown by sputtering. A chip nickel metal layer 4 with a thickness of 2500 angstroms, and finally a chip silver metal layer 5 grown on the surface 11 of the chip nickel metal layer by sputtering, with a thickness of 60000 angstroms;
[0044] 2) On the surface 15 of the carrier, a layer of carrier nickel metal layer 7 is grown by electroless plating, and its thickness is 6000 angstroms, and then a layer of carrier silver metal is grown by electroless plating on the surface 14 of the carrier nickel metal layer layer 6 having a thickness of 90,000 angstroms;
[0045]3) stack the silicon chip 2 processed in step 1) on the carrier 8 pro...
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