Novel flat type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment and gas channel connecting hole structure thereof

Abstract

The invention discloses a novel flat type PECVD (Plasma Enhanced Chemical Vapor Deposition) gas channel connecting hole structure. The novel flat type PECVD gas channel connecting hole structure is characterized in that a novel special gas hole connector is communicated to the output end of a special gas hole; the novel special gas connector is provided with a pipe body of which the top end is sealed; a plurality of side holes are formed in the sidewall of the pipe body; a side pipe is communicated to the output end of each side hole; and the output direction of each side pipe is the same as that of the special gas hole. According to the novel flat type PECVD gas channel connecting hole structure, the novel special gas hole connector with the plurality of side holes is communicated to the output end of the special gas hole, so that the phenomenon that the special gas holes in certain positions are blocked can be avoided, the stability of the equipment in long-term running can be ensured, the maintaining cycle of the equipment can be prolonged, and the output of the equipment can be increased; and moreover, the problem that unqualified sheets due to reasons such as color difference led by different thicknesses of the deposited silicon nitride film layers caused by the blockage of the special gas holes can be reduced, and the percent of pass of the product can be increased. The invention also discloses novel flat type PECVD equipment adopting the air channel connection hole structure.

Description

technical field [0001] The invention relates to the technical field of chemical industry, in particular to a novel flat plate type PECVD equipment and its gas path connection hole structure. Background technique [0002] Silicon nitride thin films have the characteristics of high chemical stability, high resistivity, good insulation, high hardness, and good optical properties, and are widely used in solar cells. [0003] At present, flat plate PECVD and tubular PECVD have been widely used in industrial production. Compared with tubular PECVD, flat plate PECVD has the characteristics of good uniformity and high output. Flat-plate PECVD equipment is widely used. [0004] In the existing flat-plate PECVD equipment, the gas paths for depositing silicon nitride films generally include 4, 6, 8 paths, etc., and the schematic diagram of each path is as follows figure 1 shown. There are different numbers of special gas pores 2 with a diameter of 0.8-1.5 mm on each gas circuit 1, ...

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Problems solved by technology

[0005] However, after the flat-panel PECV D equipment has been in operation for a period of time, because the special gas holes of each gas path will be blocked by silicon nitride and silicon particles to varying degrees, if one of the holes is blocked, the gas flow rate will drop, but If the total gas flow rate remains unchanged, the gas flow rate at other positions will increase, which will lead to changes in the thickness of the silicon nitride film deposited at different positions, poor uniformity, stability of the silicon nitride film and possible chromatic aberration. Wafer failure

[0006] When the thickness of the silicon nitride film has a large deviation due to the blockage of the pores, it is necessary to maintain the equipment and open the pores after the process adjustment cannot solve the problem, which seriously affects the stability of the PECVD equipment operation and increases the cost of equipment maintenance. cost, delaying output on the production line

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