A Fast Response Wear Leveling Method for Phase Change Memory

Abstract

The invention relates to a wear-leveling method of a phase change memory. The method comprises the steps that a hot area for frequent writing and a cold area for infrequent writing in a phase change memory are determined; the hot area is divided into a plurality of small hot area pieces; each small hot area piece and a corresponding physical location of the cold area are exchanged sequentially, moving of the small area pieces is achieved, and the hot area moving is achieved after all the small hot area pieces finish moving, and cyclic moving is conducted until the hot areas moves and extends over the whole memory area; and the physical address of the phase change memory to be accessed is obtained through a conversion formula of a logic LA-physical PA address. The quick-response phase change memory wear-leveling method has the advantages that a large amount of write operations are prevented from gathering in the hot area, and wear-leveling of the phase change memory is achieved, so that the service life of the phase change memory can be prolonged and the quick response of a system can be guaranteed.

Description

technical field [0001] The invention belongs to the technical field of computer storage, and in particular relates to a wear leveling method of a phase change memory. Background technique [0002] Phase Change Memory (PhaseChangeMemory, PCM) is a new type of non-volatile memory, which has high density, low power consumption, high-speed read and write performance, and has begun to be used in embedded systems to replace traditional NOR memory. Although phase change memory has a longer lifetime than NOR, it still cannot get rid of the dilemma of limited lifetime. A typical phase change memory cell can withstand 10 7 to 10 9 However, repeated writing to the same phase-change memory unit may cause damage to the unit within a few seconds, which brings great challenges to the use of phase-change memory in embedded systems. In recent years, with the continuous increase of the capacity of the phase change memory, it can store key information such as file system metadata and page t...

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Problems solved by technology

However, the existing research work does not take into account the memory access rules of specific applications in embedded systems. Most of the research focuses on application layer optimization, which will undoubtedly increase the complexity of embedded application development, thus limiting the development of phase change memory. Promotion on Embedded Systems

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