Thin-film transistor and electronic unit

Abstract

A thin-film transistor includes: a gate electrode; a semiconductor layer separated from the gate electrode with a separation insulating layer in between; and a source electrode and a drain electrode that are connected with the semiconductor layer and are separated from each other. Between the source electrode and the drain electrode, a thickness of the separation insulating layer at a first region where the gate electrode does not overlap both the source electrode and the drain electrode is smaller than a thickness of the separation insulating layer at a second region where the gate electrode overlaps one or both of the source electrode and the drain electrode.

Description

technical field [0001] The present invention relates to a thin film transistor including a semiconductor layer, and electronic equipment using the thin film transistor. Background technique [0002] In recent years, thin film transistors (TFTs) have been used as switching devices and the like in various electronic devices. As such TFTs, inorganic TFTs in which a semiconductor layer (channel layer) is formed using an inorganic semiconductor material and organic TFTs in which a semiconductor layer (channel layer) is formed using an organic semiconductor material are known. [0003] The TFT includes: a gate electrode; a semiconductor layer separated from the gate electrode by a gate insulating layer therebetween; and a source electrode and a drain electrode connected to the semiconductor layer and separated from each other. [0004] In order to realize a high-performance TFT, it is necessary to secure insulation between a gate electrode and a source electrode and between a gat...

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Problems solved by technology

For other reasons, surface modification of the gate insulating layer complicates the TFT manufacturing process and causes repeatability problems

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