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Ceramic target material preparation method for CIGS (copper indium gallium selenide) based solar film battery light absorption layer

A technology for solar cells and light absorbing layers, applied in coatings, metal material coating processes, ion implantation plating, etc., can solve the problems of unstable quality and high cost

Inactive Publication Date: 2013-04-03
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a ceramic target for the light-absorbing layer of a CIGS solar thin-film solar cell, aiming at the problems of unstable quality and high cost of the existing CIGS target for CIGS thin-film solar cells. stability, lower costs

Method used

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  • Ceramic target material preparation method for CIGS (copper indium gallium selenide) based solar film battery light absorption layer
  • Ceramic target material preparation method for CIGS (copper indium gallium selenide) based solar film battery light absorption layer
  • Ceramic target material preparation method for CIGS (copper indium gallium selenide) based solar film battery light absorption layer

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Embodiment 1

[0022] 1. The size of the target in this embodiment is □80mm, the inner radius of the fan-shaped ring is 10mm, and the outer radius is 35mm, such as figure 1 and 2 Tc part shown;

[0023] 2. In 2 Se 3 , Ga 2 Se 3 and Cu 2 The angles of the smallest annular sectors of Se are 5°, 20° and 20°, respectively;

[0024] 3. Ga 2 Se 3 、In 2 Se 3 and CuSe ceramic thin plates are processed into annular sectors of the size described in steps 1 and 2 respectively, and the target plane structure is as follows image 3 As shown, 1, 2 and 3 in the figure represent Cu 2 Se, In 2 Se 3 and Ga 2 Se 3 The smallest splicing unit of ;

[0025] 4. Deposit Ni with a thickness of 1 μm on the processed ceramic block by magnetron sputtering to improve the bonding strength between the target and the copper backplane;

[0026] 5. Processed on a 6mm thick copper backplane figure 1 and 2 The annular groove shown is used as the area for target splicing;

[0027] 6. In the market purchase I...

Embodiment 2

[0032] 1. The size of the target in this embodiment is □80mm, the inner radius of the fan-shaped ring is 10mm, and the outer radius is 35mm, such as figure 1 and 2 Tc part shown;

[0033] 2. In 2 Se 3 , Ga 2 Se 3 and Cu 2 The angles of the smallest annular sectors of Se are 7°, 18° and 20°, respectively;

[0034] 3. Ga 2 Se 3 、In 2 Se 3 and CuSe ceramic thin plates are processed into annular sectors of the size described in steps 1 and 2 respectively, and the target plane structure is as follows Figure 4 As shown, 1, 2 and 3 in the figure represent Cu 2 Se, In 2 Se 3 and Ga 2 Se 3 The smallest splicing unit of ;

[0035] 4. Deposit Ni with a thickness of 1 μm on the processed ceramic block by magnetron sputtering to improve the bonding strength between the target and the copper backplane;

[0036] 5. Processed on a 6mm thick copper backplane figure 1 and 2 The annular groove shown is used as the area for target splicing;

[0037] 6. In the market purchase ...

Embodiment 3

[0043]1. The size of the target in this embodiment is □80mm, the inner radius of the fan-shaped ring is 10mm, and the outer radius is 35mm, such as figure 1 and 2 Tc part shown;

[0044] 2. In 2 Se 3 , Ga 2 Se 3 and Cu 2 The angles of the smallest annular sectors of Se are 7°, 16° and 22°, respectively;

[0045] 3. Ga 2 Se 3 、In 2 Se 3 and CuSe ceramic thin plates are processed into annular sectors of the size described in steps 1 and 2 respectively, and the target plane structure is as follows Figure 5 As shown, 1, 2 and 3 in the figure represent Cu 2 Se, In 2 Se 3 and Ga 2 Se 3 The smallest splicing unit of ;

[0046] 4. Deposit Ni with a thickness of 1 μm on the processed ceramic block by magnetron sputtering to improve the bonding strength between the target and the copper backplane;

[0047] 5. Processed on a 6mm thick copper backplane figure 1 and 2 The annular groove shown is used as the area for target splicing;

[0048] 6. In the market purchase I...

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Abstract

The invention discloses a ceramic target material preparation method for a CIGS (copper indium gallium selenide) based solar film battery light absorption layer. The ceramic target material preparation method for the CIGS based solar film battery light absorption layer comprises the following steps of: firstly calculating the area proportion occupied by each binary ceramic block at a target material sputtering area, converting the area proportion into the angle of the corresponding annular fan shape, and dividing the corresponding angle into 8 equal parts as the minimum units; then measuring the size of the sputtering area of a sputtering cathode; then machining three kinds of binary ceramic plates including Ga2Se3, In2Se3 and CuSe into the binary ceramic plates with the designed size, and adjusting ingredients of each ceramic annular fan shape angle-adjustable target material, wherein the minimum unit angle ranges of the Ga2Se3, In2Se3 and CuSe annular fan shapes are 5 degrees-8 degrees, 16 degrees-20 degrees and 20 degrees-22 degrees; putting ceramic blocks into a magnetic control sputtering device, and depositing Ni of 1 micro meter on the surfaces of the ceramic blocks at room temperature; then filling the ceramic blocks alternatively into copper back plate embedded regions; and putting spliced target materials into a vacuum furnace, applying pressure of 30-35g / cm<2> on the spliced target materials, vacuumizing to 10Pa below, warming at 10 DEG C / min to 135 DEG C, keeping the temperature for 10 seconds, lowering temperature rapidly to room temperature, and taking out the target materials.

Description

technical field [0001] The invention belongs to the fields of solar cell thin films, sputtering targets, etc., and relates to a CuIn x Ga 1-x Se 2 (0<x<1) A method for preparing a ceramic target for preparing a light-absorbing layer. Background technique [0002] Copper indium gallium selenide (CIGS) thin film battery has high conversion efficiency (the highest conversion efficiency is close to 20%) and low manufacturing cost. At the same time, it can be deposited on flexible substrates such as polyimide film. It has the characteristics of flexibility and can be used in many special Field applications, such as field work tents, spacecraft, solar panels, etc. At present, copper indium gallium selenide thin-film solar cells are a research hotspot in the international and domestic photovoltaic fields, and countries around the world have also invested a lot of money to rapidly promote their large-scale industrialization. At present, the mainstream methods for preparing...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35
Inventor 屈飞古宏伟丁发柱戴少涛
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI