Device for preparing carbon film on inner wall of quartz ampoule used for monocrystal growth

A technology of quartz ampoule and preparation device, applied in the field of materials, can solve the problem of uneven carbon film and the like

Active Publication Date: 2013-04-03
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
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Problems solved by technology

[0004] In view of the above analysis, the present invention aims to provide a device for preparing a carbon film on the inner wall of a qua

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  • Device for preparing carbon film on inner wall of quartz ampoule used for monocrystal growth

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Embodiment Construction

[0020] Preferred embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of the application and are used together with the embodiments of the present invention to explain the principle of the present invention. For the sake of clarity and simplicity, detailed descriptions of known functions and constructions in the devices described herein will be omitted when it may obscure the subject matter of the present invention.

[0021] The embodiment of the present invention provides a device for preparing a carbon film on the inner wall of a quartz ampoule for single crystal growth, see figure 1 The unit includes:

[0022] The quartz ampoule 1 is vertically arranged in the heating furnace 9, and the furnace mouth of the heating furnace 9 is provided with a plug 10 for sealing the heating furnace 9;

[0023] An ampoule support is arranged on the neck 2 of the quartz am...

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Abstract

The invention discloses a device for preparing a carbon film on the inner wall of a quartz ampoule used for monocrystal growth. The device is characterized in that an ampoule bracket is arranged at the neck of the quartz ampoule; a channel is arranged in the ampoule bracket; a flow guide tube is arranged in the channel; one end of the flow guide tube is inserted in the bottom of the quartz ampoule; the other end of the flow guide tube penetrates out of the ampoule bracket to be connected with an exhaust pipe; one end of the exhaust pipe is connected with a vacuum pump; an air inlet pipe is arranged on the ampoule bracket; carbon film splitting gas enters the quartz ampoule through a gap between the flow guide tube and the neck; and a flowmeter is arranged on each of the air inlet pipe and the exhaust pipe. The ampoule bracket is arranged at the neck of the quartz ampoule, and dynamic equilibrium of splitting gas in the quartz ampoule is realized through the flowmeters arranged on the air inlet pipe and the exhaust pipe, so that an even carbon film can be obtained in the quartz ampoule.

Description

technical field [0001] The invention relates to the field of materials, in particular to a device for preparing a carbon film on the inner wall of a quartz ampoule for single crystal growth. Background technique [0002] Quartz ampoules are widely used in the growth process of semiconductor single crystal materials. Some raw materials will chemically react with quartz to produce adhesion, thereby affecting crystal growth. On the other hand, impurities in quartz will also diffuse into the material, affecting material performance. Therefore, a layer of carbon film is generally prepared on the inner wall of the quartz ampoule to avoid similar situations. The quality of the carbon film directly affects the probability of parasitic nucleation of the melt during crystal growth, thereby affecting the yield of crystal growth. [0003] In the process, anhydrous ethanol cracking or methane cracking is generally used to prepare carbon films. During the reaction, high-purity nitrogen i...

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Application Information

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IPC IPC(8): C23C16/26C23C16/455C23C16/52
Inventor 吴卿周立庆刘兴新徐强强
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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