Array substrate, preparation method of array substrate, thin film transistor and display device
A technology of thin-film transistors and array substrates, applied in the display field, can solve the problems of complicated process, insufficient practical application, and restrictions on the development of TFT-LCD, and achieve the effect of simple preparation process and good driving performance
Inactive Publication Date: 2013-04-03
BOE TECH GRP CO LTD
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Problems solved by technology
In TFT-LCD, the high-performance thin film transistor is the key device of the whole TFT-LCD. In the existing market, the active layer of the thin film transistor as an active switching device is mostly deposited and crystallized by amorphous silicon such as a-Si. As a result, the active layer formed by depositing and crystallizing amorphous silicon has some inherent problems, such as low mobility and poor stability, which limit the further development of TFT-LCD, especially in high-resolution, current-driven and other models, the problem is more prominent
Low-temperature polysilicon (LTPSpoly-Si) can solve this problem, but no matter what kind of crystallization process it adopts, it is a two-step crystallization method, and the process is complicated, which also brings shortcomings to its practical application.
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[0059] The thin film transistor provided by the present invention includes a source and drain 7, an active layer 3, a gate insulating layer 6 and a gate 1 which are sequentially formed, such as figure 1 Shown; wherein, the active layer 3 is prepared from microcrystalline silicon.
[0060] In the above-mentioned thin film transistors, the active layer 3 is made of microcrystalline silicon. As a kind of crystalline silicon, microcrystalline silicon not only has the ability of direct deposition of traditional amorphous silicon in a large area at low temperature, but also has a preparation process compatible with it. Therefore, in When forming the active layer 3, no crystallization process is required, and the preparation process is simple; at the same time, the field effect mobility of the active layer 3 formed by microcrystalline silicon is higher than that of the active layer in the amorphous silicon thin film transistor. A thin film transistor whose active layer is formed of c...
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Abstract
The invention discloses a thin film transistor. The thin film transistor comprises a source-drain electrode, an active layer, a gate insulation layer and a gate electrode which are sequentially formed, the active layer is prepared by microcrystalline silicon, a crystallization process is not required when the microcrystalline silicon is used for forming the active layer, and the preparing process is simple; simultaneously, field effect mobility ratios of the active layer formed by the microcrystalline silicon is higher than that of an active layer in an amorphous silicon thin film transistor (TFT) structure, influences of a hatching layer on a current path between a source electrode and a drain electrode can be reduced by means of a top gate type thin film transistor structure, therefore, the drive capability of the thin film transistor with the active layer formed by the microcrystalline silicon is high. The invention further provides a thin film transistor array substrate with the thin film transistor, a preparation method of the thin film transistor array substrate and a display device with the thin film transistor array substrate.
Description
technical field [0001] The invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof, a thin film transistor and a display device. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. In TFT-LCD, the high-performance thin film transistor is the key device of the whole TFT-LCD. In the existing market, the active layer of the thin film transistor as an active switching device is mostly deposited and crystallized by amorphous silicon such as a-Si. As a result, the active layer formed by depositing and crystallizing amorphous silicon has some inherent problems, such as low mobility and poor stability, which limit the further development of TFT-LCD, especially in high-resolution, current-driven And other models, the problem is more ...
Claims
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IPC IPC(8): H01L29/786H01L29/04H01L21/336H01L21/77G02F1/1368
Inventor 杨静戴天明
Owner BOE TECH GRP CO LTD