Insulated gate bipolar transistor (IGBT) fault detection circuit

A fault detection circuit and circuit technology, applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., can solve problems such as breakdown

Inactive Publication Date: 2013-04-10
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the IGBT series circuit, there are many reasons for IGBT damage, but no matter what causes the I

Method used

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  • Insulated gate bipolar transistor (IGBT) fault detection circuit
  • Insulated gate bipolar transistor (IGBT) fault detection circuit
  • Insulated gate bipolar transistor (IGBT) fault detection circuit

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0024] figure 1 It is a block diagram of the overall structure of the present invention. Including IGBT damage detection circuit, IGBT overcurrent detection circuit, IGBT overvoltage detection circuit, signal feedback circuit; the two detection terminals of IGBT damage detection circuit are respectively connected with the collector and emitter of the detected IGBT; IGBT overcurrent detection circuit The two detection terminals of the IGBT are respectively connected to the collector and emitter of the detected IGBT; the two detection terminals of the IGBT overvoltage detection circuit are respectively connected to the collector and emitter of the detected IGBT; the overcurrent of the IGBT damage detection circuit The detection signal output terminal is connected to the first input terminal of the signal feedback circuit; the damage detection signal outp...

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Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) fault detection circuit which comprises an IGBT damage detection circuit, an IGBT over-current detection circuit, an IGBT overvoltage detection circuit and a signal feedback circuit. Three detection circuits can detect voltage of an IGBT collector electrode - emitting electrode through high flexibility voltage comparers, the voltage is compared with reference voltage set by the voltage comparers, and detection results of all detection circuit can be input into the signal feedback circuit in a transistor-transistor logic (TTL) electrical level mode. When any fault of damage, over current and overvoltage of the IGBT happens, optical fiber light emitting heads in the feedback circuit can all be triggered. The achieved fault feedback signals can be separated and transmitted by optical fibers to be output by a high speed optocoupler. The IGBT fault detection circuit can detect whether the IGBT is damaged in real time, can detect whether over current of the IGBT happens in real time, can detect whether overvoltage of the IGBT happens, and can quickly output fault feedback signals when any fault happens.

Description

technical field [0001] The invention relates to a fault detection circuit, in particular to an IGBT fault detection circuit. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a power device composed of power MOSFET and GTR. It is widely used in various Pulse power equipment: such as radar transmitters, high-voltage pulse electric field sterilization equipment, etc. With the continuous improvement of IGBT voltage, current, and frequency levels, the price of IGBT is also getting higher and higher. The IGBT itself is a device with poor overvoltage and overcurrent resistance. During use, it is often damaged due to overcurrent and overvoltage for a very short time. [0003] On the other hand, the current research on IGBT series technology is more and more extensive, but it mainly focuses on: ① dynamic voltage equalization of each series IGBT during turn-on and turn-off; ② transmission time monitoring of IGBT drive circuit. The main purpose of these two ...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01R19/165
Inventor 王剑平余琳江婷婷黄康王海军盖玲
Owner ZHEJIANG UNIV
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