A kind of solar cell surface low temperature passivation method
A solar cell, low-temperature technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of difficulty in reaching the medium, destroying the original structure of the solar cell, and difficult to achieve passivation, etc. avoid damaging effects
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Embodiment 1
[0031] The prototype sample of the nano-surface silicon solar cell with the nanostructure 6 that has been prepared is placed in the autoclave, and 20 atmospheres of pure oxygen O are introduced into the autoclave. 2 ; Then heat the sealed autoclave to 400°C, at this time the air pressure in the autoclave increases to 4.3×106 Pa, and the sample continues to be heated for 25 minutes under this condition.
[0032] like figure 1 The sample after passivation by this method is shown as the method to prepare the metal lower electrode 1 and the metal upper electrode 4, and the solar cell efficiency test system is used to test the nano-surface silicon solar cells before and after passivation, and the test results It shows that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.2% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Quant...
Embodiment 2
[0034] The prototype sample of the nano-surface silicon solar cell with nanostructure 6 that has been prepared is placed in the high-pressure reactor; the air inlet of the sealed reactor is continuously fed with pure oxygen O2 flowing at 40 atmospheres and 400 ° C to adjust the reaction. The air output from the outlet of the reactor maintained the internal pressure of the reactor at 40 atmospheres; the internal temperature of the reactor was maintained at 400°C; the sample continued to be heated under this condition for 25 minutes. The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.1% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Quantum efficiency test reference before and after passivation image 3 .
Embodiment 3
[0036] Put the prepared prototype sample of the nano-surface silicon solar cell with nanostructure 6 into the autoclave, and add 1 ml of water into the autoclave;
[0037] 10 atmospheres of pure oxygen O was introduced into the autoclave 2 ; Then heat the sealed autoclave to 300°C, at this time the pressure of the autoclave increases and is controlled at 4.0×106 Pa, and the sample continues to be heated for 25 minutes under this condition.
[0038] The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.8% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Quantum efficiency test reference before and after passivation image 3 .
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