Method for manufacturing light-emitting diode
A technology of light-emitting diodes and electrodes, which is applied in nano optics, electrical components, nanotechnology, etc., can solve the problems of limited ability to improve light extraction efficiency of light-emitting diodes and limit the application of light-emitting diodes, so as to improve performance, improve quality, and reduce power consumption. The effect of wrong density
Active Publication Date: 2013-04-10
TSINGHUA UNIV +1
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Problems solved by technology
However, the light-emitting diodes prepared by the prior art have limited ability to improve the light extraction efficiency of the light-emitting diodes, thereby limiting the application of the light-emitting diodes
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[0022] In order to further illustrate the present invention, the following specific embodiments are given and described in detail with accompanying drawings.
[0023] see figure 1 , the first embodiment of the present invention provides a light emitting diode 10, which includes: a substrate 100, a first semiconductor layer 110, an active layer 120, a second semiconductor layer 130, a first electrode 112, a second electrode 132 and a three-dimensional nanostructure array 140 . The substrate 100 has opposite first surface (not marked) and second surface (not marked), the first semiconductor layer 110 , active layer 120 and second semiconductor layer 130 are sequentially stacked on the first surface of the substrate 100 One side, and the first semiconductor layer 110 is disposed close to the substrate 100, the three-dimensional nanostructure array 140 is disposed on the surface of the substrate 100 adjacent to the first semiconductor layer 110, and the substrate 100 is far away ...
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The invention provides a method for manufacturing a light-emitting diode. The method includes: providing a substrate which comprises an extending growing surface; arranging a masking layer on the extending growing surface, wherein a plurality of grooves extending toward the same direction and a plurality of strip-shaped structures are formed on the masking layer; etching the substrate, wherein the plurality of adjacent strip-shaped protruding structures are closed in pairs during the process to form a plurality of three-dimensional nanometer structure prefabricating structures; removing the masking layer, and forming an M-shaped three-dimensional nanometer structure array on the extending growing surface; sequentially growing a first semiconductor layer, an active layer and a second semiconductor layer on the surface of the three-dimensional nanometer structure array; arranging a first electrode to be electrically connected with the first semiconductor layer; and arranging a second electrode to be electrically connected with the second semiconductor layer.
Description
technical field [0001] The invention relates to a method for preparing a light-emitting diode, in particular to a method for preparing a light-emitting diode with a three-dimensional nanostructure array. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes an N-type semiconductor layer, a P-type semiconductor layer, an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually a transparent electrode) disposed on the P-type semiconductor layer. ...
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IPC IPC(8): H01L33/00H01L33/20H01L33/22H01L33/44B82Y20/00
CPCH01L33/007H01L33/22H01L33/44
Inventor 朱振东李群庆范守善
Owner TSINGHUA UNIV