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A micro-nano wire array structure ultraviolet avalanche photodetector and its preparation method

A photodetector and ultraviolet avalanche technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems affecting detector performance, avalanche photodiode failure, and device reliability, etc., and achieve the suppression of micro-plasma breakdown phenomenon , suitable for mass production, and the effect of improving device performance

Inactive Publication Date: 2015-08-26
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]a) The controllability of micro-nano wires is poor
The reaction in the cavity is complex, and the deviation of the growth direction of a few micro-nanowires will lead to the failure of the entire micro-nanowire array avalanche photodiode, and the yield is not high
[0006]b) The uniformity of the micro-nano wire array is not good
It is difficult to ensure that the quality of each micro-nanowire is the same by using the micro-nanowire array directly grown in situ, and the difference between individuals is large, which affects the reliability of the device.
[0007] In addition, although GaN nanowire array PIN photodiodes grown in situ by MBE have also been reported, (see literature: [2] ANDRES DE LUNA B, MARIA T, GWENOLE J, et al. Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles [J]. Nanotechnology, 2010, 21(31): 315201.) However, it adopts the method of normal incidence, that is, the detection signal is from The detector is incident from the front, and the device uses ITO as the p-type electrode, which makes it absorb a lot of ultraviolet light in the solar blind area, which affects the performance of the detector

Method used

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  • A micro-nano wire array structure ultraviolet avalanche photodetector and its preparation method
  • A micro-nano wire array structure ultraviolet avalanche photodetector and its preparation method
  • A micro-nano wire array structure ultraviolet avalanche photodetector and its preparation method

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Embodiment 1

[0037] Such as figure 1 As shown, it is a schematic diagram of the structure of the ultraviolet avalanche photodetector of the micro-nano wire array structure of the present invention, which adopts a back-incidence structure and includes a substrate 1, a buffer layer 2, an unintentionally doped layer 3, and a first n-type photodetector from bottom to top. doped layer 4 and the second n-type doped layer 5.

[0038] In the middle of the surface of the second n-type doped layer 5, a micro-nanowire array formed by a plurality of micro-nanowire units is provided, and each micro-nanowire unit is a PIN structure photodiode, which sequentially includes a third n-type doped layer 6 , low-doped or unintentionally doped active layer 7 , first p-type doped layer 8 and second p-type doped layer 9 .

[0039] The gaps between two adjacent micro-nanowire units are filled with an insulating dielectric layer 10, and the sides of the micro-nanowire units located at both ends are also covered w...

Embodiment 2

[0054] This embodiment is similar to Embodiment 1, the only difference is that the parameters of each material layer are slightly different. The materials of each layer of the device in this embodiment are as follows: Substrate 1 is a (001) sapphire substrate with double-sided optical grade polishing , the buffer layer 2 is a BeO buffer layer 1, and the unintentionally doped layer 3 used to prevent the incident light from being absorbed is unintentionally doped with Be 0.7 Zn 0.3 O layer 3 (also known as u-Be 0.7 Zn 0.3 O layer). The first n-type doped layer 4 is n-type doped Be 0.7 Zn 0.3 O layer 4 (also known as n-Be 0.7 Zn 0.3 O layer), the second n-type doped layer 5 is n-type doped Be 0.4 Zn 0.6 O layer 5, the third n-type doped layer 6 is n-type doped Be 0.4 Zn 0.6 O layer 6. Low-doped or unintentionally doped active layer 7 is low-doped Be 0.4 Zn 0.6 O layer or unintentionally doped Be 0.4 Zn 0.6 O layer (also referred to as i-Be 0.4 Zn 0.6 O layer or u...

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Abstract

The invention relates to the technical field of ultraviolet photo detectors, in particular to an ultraviolet avalanche photo detector having a microware or nanowire array structure. The ultraviolet avalanche photo detector comprises a substrate, a buffer layer, an unintentionally-doped layer with a large forbidden gap, a first n type doped layer with a large forbidden gap, a second n type doped layer with a normal forbidden gap, a low-doped or unintentionally-doped active layer and a p type doped layer in sequence from bottom to top. The ultraviolet avalanche photo detector further comprises a microware or nanowire array which is manufactured by adopting an etching method, insulating medium layers filled into gaps among microwire or nanowire units, a n-type ohmic contact electrode arranged on the second n type doped layer, and a type ohmic contact electrode arranged on the p-type doped layer. The device has a back face incidence structure. In a preparation method of the device, a photoetching technique and an etching method are adopted, so that the controllability in a preparing process is high, the positions and sizes of the microwires or nanowires can be controlled more accurately, the uniformity of the microwires or nanowires of the prepared device is higher, and the reliability of the device is higher.

Description

technical field [0001] The invention relates to the technical field of ultraviolet photodetectors, in particular to a micro-nanowire array (Microwire or Nanowire Array) structure ultraviolet avalanche photodetector and a preparation method thereof. Background technique [0002] Ultraviolet photoelectric detectors are widely used in civilian fields such as fire detection, environmental monitoring, and offshore oil monitoring. At the same time, they also play an important role in military applications such as secure satellite space communications and missile tail flame detection. However, this part of the signal source is usually extremely weak, and its accurate detection requires the ultraviolet detection device to have high photocurrent gain to achieve high detection sensitivity. Among various types of photodetectors, avalanche photodiodes are the most common way to realize high photocurrent of detection devices. This type of device applies a high reverse bias electric fiel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/0352H01L31/105H01L31/107H01L31/18
Inventor 江灏吴华龙
Owner SUN YAT SEN UNIV