Method for detecting repetitive defects of semiconductor devices

Abstract

A semiconductor device repeated defect detection method comprises a step S1: fixed point scanning, namely a fixed point scanning form is established, an internal zone of a repeated unit of a to-be-detected module is selected, a minimum zone which an electron beam defect scanner can scan is used as a scanning unit zone which is set to be a defect to be detected, and an electron microscope map is photographed; a step S2: gray scale sample collecting, namely the electron microscope map obtained in step S1 is analyzed in a gray scale mode, typical gray scale distribution and a gray scale distribution interval of the typical gray scale distribution are acquired, and a standard gray scale interval is defined; and a step S3: abnormal semiconductor device forecasting. Gray scale collecting data obtained through the electron beam defect scanner is compared with the standard gray scale interval of a normal semiconductor device, an abnormal semiconductor device can be forecast effectively, effective monitoring on a repeated defect generated in ion implantation technology is achieved, and accordingly a methodology is provided for process window optimizing and on-line monitoring, and on-line manufacturing of semiconductors and yield improvement are guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a detection method for repetitive defects of semiconductor devices. Background technique [0002] The ion implanter is one of the most critical doping equipment in the manufacture of semiconductor devices. It is a device that guides impurities into the semiconductor wafer to change the conductivity of the wafer. The quality of semiconductor ion implantation plays a key role in the performance of semiconductor devices. [0003] With the development of integrated circuit technology and the scaling down of key dimensions, for example, when the device is below 55nm, the control of ion implantation is particularly important. Many factors will have a significant impact on the performance of semiconductor devices, including but not limited to the dose of implanted ions, that is, the ion concentration, the depth of ion implantation, and the diffusion of ions themselves. I...

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Problems solved by technology

[0006] The present invention provides a detection method for repetitive defects of semiconductor devices aimed at the indiscriminate appearance of repetitive defects of traditional semiconductor devices in the prior art and the inability to detect such defects

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