Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band

A technology for amplifier circuits and power amplifiers, applied in power amplifiers, high-frequency amplifiers, etc., can solve problems such as high supply current, lower RF power amplifier efficiency, and affect the overall performance of RF power amplifiers

Active Publication Date: 2013-04-24
GUANGZHOU HUIZHI MICROELECTRONICS
View PDF3 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In such a circuit using a notch filter at the output, the loss of the notch filter itself will directly reduce the efficiency of the RF power amplifier, resulting in a high supply current, thereby affecting the overall performance of the RF power amplifier

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band
  • Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band
  • Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Embodiments of the present invention will be described below through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various modifications or changes may be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0015] A specific example of the present invention is figure 2 shown. The input signal RFin reaches the base of the first-stage power amplifier tube Q1 through the capacitor C1, the emitter of the power amplifier tube Q1 is grounded, the collector is connected to the collector power supply voltage Vcc through an inductor L1, and the collector of the power amplifier tube Q1 is used as the first stage. The output terminal of the first-stage powe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a multistage radio frequency power amplifier circuit capable of reducing interference on an ISM frequency band. One or a plurality of resonant filter matching networks are arranged among stages of a multistage radio frequency power amplifier, the resonant filter matching networks enable power of succeeding impedance of the radio frequency power amplifier matched with a front power amplification tube to output a load value and simultaneously are applied to inductance and capacitance (LC) resonant network resonance to ISM frequency band frequency and / or offset frequency of radio frequency band and the ISM frequency band. The multistage radio frequency power amplifier circuit capable of reducing the interference on the ISM frequency band enables the multistage radio frequency power amplifier to effectively reduce the interference on the ISM frequency band without reducing overall efficiency and solves coexisting problems of radio frequency signals and ISM frequency band signals.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit and a module, in particular to a multistage radio frequency power amplifier capable of reducing interference to ISM frequency bands. Background technique [0002] In modern wireless communication systems, RF power amplifiers are key components for wireless transmission of RF signals. The main function of the radio frequency amplifier is to amplify the modulated radio frequency signal to the required power value, transmit it to the antenna end, and ensure that the receiver in a certain area can receive the signal. With the development of modern wireless communication terminal technology, especially the rapid development of multi-frequency and multi-mode smart phone technology in recent years, it is required that wireless communication terminals can support wireless communication modes of various frequency bands and various communication protocols. Therefore, the requirements for RF power ampli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/20H03F3/189
Inventor 郭耀辉
Owner GUANGZHOU HUIZHI MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products