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Shape controlled cerium oxide particle, as well as preparation method and application thereof

A technology of cerium oxide and morphology, applied in chemical instruments and methods, inorganic chemistry, rare earth metal compounds, etc., can solve the problems of poor stability, low yield, high production cost, etc., achieve good repeatability and reduce production cost.

Inactive Publication Date: 2013-05-08
WUJIANG CHUANGYUAN NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a shape-controlled cerium oxide particle, a preparation method and its application, which solve the technical problems of poor stability, low yield and high production cost in the existing polishing process

Method used

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  • Shape controlled cerium oxide particle, as well as preparation method and application thereof
  • Shape controlled cerium oxide particle, as well as preparation method and application thereof
  • Shape controlled cerium oxide particle, as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The first step: a certain amount of cerium-containing compound is prepared into 10 milliliters of an aqueous phase solution with a cerium ion concentration of 0.5M, stirred evenly, and gradually adding 70 milliliters of a hydroxide ion concentration of 10 milliliters under stirring conditions -2 M sodium hydroxide solution, fully stirred for 30 minutes;

[0022] Step 2: Put the stirred solution in a hydrothermal reaction kettle, heat it to 100°C and maintain it for 20 hours, separate the reaction product by filtration, wash the reaction product with deionized water and ethanol in turn, and dry it in the air dry, the drying temperature is 60°C;

[0023] Step 3: Calcinate the dried reaction product in a muffle furnace at 600° C. for 2 hours, cool it down to room temperature naturally, and take it out.

[0024] Embodiment 2: as figure 2 The preparation method of the shown rod-shaped cerium oxide particles, the steps are:

Embodiment 2

[0025] The first step: a certain amount of cerium-containing compound is prepared into 10 milliliters of an aqueous phase solution with a cerium ion concentration of 0.5M, stirred evenly, and gradually adding 70 milliliters of sodium hydroxide with a hydroxide ion concentration of 6M under stirring conditions solution, fully stirred for 30 minutes;

[0026] Step 2: Put the stirred solution in a hydrothermal reaction kettle, heat it to 100°C and maintain it for 20 hours, separate the reaction product in the form of particles by filtration, wash the reaction product with deionized water and ethanol in turn, and place in Drying in the air, the drying temperature is 60 ℃;

[0027] Step 3: Calcinate the dried reaction product in a muffle furnace at 600° C. for 2 hours, cool it down to room temperature naturally, and take it out.

[0028] Comparative example 1: if image 3 Shown, utilize solid chemical method to produce the preparation method of cerium oxide particle, the step is:...

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Abstract

A shape controlled cerium oxide particle, as well as a preparation and an application of the shape controlled cerium oxide particle are provided; the particle size and the shape of the generated cerium oxide particles are controlled by controlling the concentration of an alkaline solution; according to various requirements on polishing amount and scratch defect in the polishing process stages, the shape controlled cerium oxide particles are combined and compounded to be a polishing solution applicable for various polishing process stages; the polishing solution confected in the invention is especially applicable for the polishing technology in the shallow trench isolation technology of the semiconductor device of less than 90nanometers; due to the controllability of the shape, the requirement of chemical mechanical flattening special stage is met by selecting the granules with special shape, the chemical mechanical flattening in the semiconductor device shallow trench isolation manufacturing technology not only keeps the removal rate of polishing but also can reduces the scratch defect after the polishing, thus the rate of finished products of the device shallow trench isolation technology is improved.

Description

technical field [0001] The present invention relates to a method for preparing a nanoscale shape-controlled cerium oxide polishing material and its application field, in particular to a shape-controlled cerium oxide particle and its preparation method and its use in the manufacturing process of a semiconductor device shallow trench isolation (Shallow Trench Isolation, STI) Application of chemical mechanical planarization (CMP). Background technique [0002] With the development of social urbanization, science and technology, and humanization, the application of integrated circuits has developed vigorously. Large-scale integrated circuits (VLIC) are connected by individual devices through specific electronic channels. Therefore, in the integration In circuit manufacturing, it is necessary to be able to isolate devices as required, and then these devices are connected to each other according to the design requirements to form the required specific circuit structure; the quali...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09G1/02
Inventor 茅云奚瑞华
Owner WUJIANG CHUANGYUAN NEW MATERIAL TECH