Apparatus and method for carrying out selenylation treatment on CIGS (copper indium gallium selenide) thin films and CIGS thin-film device

A technology of a copper indium gallium selenide and a processing device, which is applied in the field of copper indium gallium selenide thin film devices, can solve the problems that the thin film is prone to pinholes, the selenium vapor pressure is not stable enough, and cannot be processed in batches, so as to achieve stable selenization process and prevent high temperature Oxidation to ensure repeatable effect

CN103088301AInactive Publication Date: 2013-05-08INST OF PROCESS ENG CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2013-05-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to an apparatus and a method for carrying out selenylation treatment on CIGS (copper indium gallium selenide) thin films and a CIGS thin-film device. The apparatus comprises a quartz tube, a selenylation unit is arranged in the quartz tube, the selenylation unit comprises a selenium source groove and a CIGS thin-film groove which are connected through a thermal insulation material, a protective cover is arranged above the two grooves, and a confined space is formed among the protective cover and the two grooves. A solid selenium source and a CIGS thin film are respectively placed in the selenium source groove and the CIGS thin-film groove, and then operations of vacuumizing, heating and selenylation treatment are sequentially performed. The apparatus and the method disclosed by the invention have the advantages of less selenium vapor leakage, high selenylation efficiency, and capability of simultaneously treating multiple samples, and the like, and the stability and the batch preparation of CIGS thin-film solar cell devices are facilitated.
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Description

technical field

[0001] The invention relates to the field of solar cell preparation, in particular to a selenization treatment device and method for a copper indium gallium selenium thin film and a copper indium gallium selenide thin film device. Background technique

[0002] Copper indium gallium selenide (CIGS for short) thin-film solar cell materials belong to group I-III-VI semiconductor materials. By adjusting the ratio of the four elements of CIGS, part of In in CIGS materials is replaced by Ga to form CuIn 1-x Ga x Se 2 structure, the energy gap can be continuously adjusted between 1.04 and 1.68eV, which provides an important theoretical basis for the preparation of Ga component-regulated copper indium gallium selenium thin film laminated cells, and the photoelectric conversion efficiency of the cell components can reach 20.3%. The main methods used to prepare CIGS thin-film solar cells with high photoelectric conversion efficiency include: co-evaporation method, me...

Examples

Embodiment 1

[0054] Place the crucible with selenium powder and a CIGS film to be treated in the selenium source groove 4 and the CIGS film groove 1 of the closed selenization unit respectively, and the selenization unit is placed in the electronic temperature-controlled dual temperature zone In the quartz tube 5 of the tubular heating furnace, turn on the vacuum pump, evacuate to 0.4Pa, close the vacuum valve, then open the high-purity nitrogen valve, feed high-purity nitrogen, keep the nitrogen pressure at 40Pa, open the heating switch of the tubular heating furnace, Control the temperature in the selenium source area to 180°C, and control the temperature in the CIGS thin film area to 400°C. Keep the temperature and nitrogen pressure, selenize for 60 minutes, then stop heating, slowly cool down, take out the CIGS thin film device, and perform characterization. The SEM image is as follows figure 1 As shown, the XRD pattern is as Image 6 Shown, as the XRD spectrum before the contrast sele...

Embodiment 2

[0056] Place the crucible containing the selenium powder and the two CIGS films to be treated in the selenium source groove 4 and the CIGS film groove 1 of the closed selenization unit respectively, and the selenization unit is placed in an electronic temperature-controlled dual-temperature In the quartz tube 5 of the district tubular heating furnace, turn on the vacuum pump, evacuate to 0.4Pa, close the vacuum valve, then open the high-purity nitrogen valve, feed high-purity nitrogen, keep the nitrogen pressure at 150Pa, and turn on the heating switch of the tubular heating furnace , control the temperature in the selenium source area to 190°C, and control the temperature in the CIGS thin film area to 400°C. Maintain the temperature and nitrogen pressure, selenize for 60 minutes, then stop heating, slowly cool down, and take out the CIGS thin film device for characterization.

Embodiment 3

[0058] Place the crucible containing the selenium powder and the four CIGS films to be treated in the selenium source groove 4 and the CIGS film groove 1 of the closed selenization unit respectively, and the selenization unit is placed in an electronic temperature-controlled dual-temperature In the quartz tube 5 of the district tubular heating furnace, turn on the vacuum pump, evacuate to 0.6Pa, close the vacuum valve, then open the high-purity argon valve, feed high-purity argon, keep the argon pressure at 80Pa, and turn on the tubular heating Furnace heating switch, control temperature of selenium source area to 210°C, control temperature of CIGS device area to 500°C, maintain temperature and nitrogen pressure, selenization treatment for 55min, then stop heating, slowly cool down, take out CIGS thin film device for characterization.