Apparatus and method for carrying out selenylation treatment on CIGS (copper indium gallium selenide) thin films and CIGS thin-film device

Abstract

The invention relates to an apparatus and a method for carrying out selenylation treatment on CIGS (copper indium gallium selenide) thin films and a CIGS thin-film device. The apparatus comprises a quartz tube, a selenylation unit is arranged in the quartz tube, the selenylation unit comprises a selenium source groove and a CIGS thin-film groove which are connected through a thermal insulation material, a protective cover is arranged above the two grooves, and a confined space is formed among the protective cover and the two grooves. A solid selenium source and a CIGS thin film are respectively placed in the selenium source groove and the CIGS thin-film groove, and then operations of vacuumizing, heating and selenylation treatment are sequentially performed. The apparatus and the method disclosed by the invention have the advantages of less selenium vapor leakage, high selenylation efficiency, and capability of simultaneously treating multiple samples, and the like, and the stability and the batch preparation of CIGS thin-film solar cell devices are facilitated.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a selenization treatment device and method for a copper indium gallium selenium thin film and a copper indium gallium selenide thin film device. Background technique [0002] Copper indium gallium selenide (CIGS for short) thin-film solar cell materials belong to group I-III-VI semiconductor materials. By adjusting the ratio of the four elements of CIGS, part of In in CIGS materials is replaced by Ga to form CuIn 1-x Ga x Se 2 structure, the energy gap can be continuously adjusted between 1.04 and 1.68eV, which provides an important theoretical basis for the preparation of Ga component-regulated copper indium gallium selenium thin film laminated cells, and the photoelectric conversion efficiency of the cell components can reach 20.3%. The main methods used to prepare CIGS thin-film solar cells with high photoelectric conversion efficiency include: co-evaporation method, me...

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Problems solved by technology

[0003] Liu Yun et al. placed the selenium source and the CIGS substrate in the two temperature zones of the quartz tube in a dual-temperature zone tube furnace, and carried out selenization treatment under vacuum conditions. The temperature of the selenium source zone was controlled at 180-210°C The CIGS substrate area is controlled at a temperature of 400-550°C. After selenization treatment, the grain size of the metal prefabricated layer prepared by magnetron sputtering increases significantly, and the surface structure is smooth. However, the author uses vacuum conditions for selenization, and the selenium vapor pressure is not stable enough. In addition, the selenium source and the CIGS substrate are not sealed, the selenium vapor will volatilize into the whole quartz tube, and solidify in the low temperature area, the selenization process is unstable, and the CIGS film is prone to pinholes

[0004] Jiang Fangdan used the method of vacuum evaporation to selenize the CIGS prefabricated layer. Since the selenium source and the CIGS substrate were respectively heated by the halogen tungsten lamp and the electric heating wire, the distance between the selenium source and the CIGS substrate was relatively close, and the temperature control of the selenium source and the CIGS substrate Inaccurate, the selenization process is not stable enough, and this method is difficult to simultaneously selenize multiple CIGS substrates

[0005] Mirasano selenizes CIGS devices in a tubular heating furnace. The author uses a closed selenization unit to selenize CIGS devices at a high temperature under a certain inert gas pressure. The selenium vapor is relatively uniform in the entire selenization unit, but the author uses a single temperature Zone tube furnace, the temperature of the selenium source and the CIGS device are the same, it is difficult to adjust the ratio of each metal element in the CIGS film, and the optimization effect on the composition of the CIGS film is not ideal

[0006] Therefore, in the current method for preparing CIGS thin film devices, there are problems such as unstable selenization process, pinholes in the film, difficulty in simultaneous selenization treatment of multiple CIGS substrates, and batch processing.

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