Phase change memory driving circuit and setting and resetting method

Abstract

The invention provides a phase change memory driving circuit which comprises a phase change circuit, a setting and resetting circuit used for providing setting current and resetting current, a reading circuit used for providing reading current, and a switching circuit used for controlling a pulse timing sequence of operating current, wherein one end of each of the phase change circuit, the setting and resetting circuit and the reading circuit are connected with the switching circuit, and the other ends of the phase change circuit, the setting and resetting circuit and the reading circuit are grounded. The phase change memory driving circuit also comprises an incubation circuit, wherein the incubation circuit is used for providing nanosecond order incubation current for the phase change memory; and one end of the incubation circuit is connected with the switching circuit, and the other end of the incubation circuit is grounded. According to the phase change memory driving circuit, the phase change speed of the phase change memory is increased, and the power consumption is reduced, so that large-scale production of the phase change memory can be realized. The invention also provides a setting and resetting method for the phase change memory.

Description

technical field [0001] The invention relates to the technical field of large-scale integrated circuits, in particular to a phase-change memory driving circuit and a setting and resetting method for phase-change materials to achieve faster phase transitions at lower drive voltages by adding an incubation current. Background technique [0002] As a non-volatile memory, phase change memory is used to replace flash memory that can no longer be integrated. In the phase change memory, the change of the resistance difference produced by the reversible phase transition of the chalcogenide material is used to characterize the two states, thereby realizing the storage of data. [0003] Each storage cell of a phase change memory generally includes a memory and a driving circuit. The phase-change material within the memory is changed from a crystalline state to an amorphous state and vice versa by a current pulse provided by a driving circuit. The phase change material within the resi...

AI Technical Summary

Problems solved by technology

The resulting problem is that when the integration level is gradually increased, the power consumption of the entire device will also be large, and there will be undesirable phenomena such as thermal crosstalk.

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